Datasheet > AAT8107IAS-T1

AAT8107IAS-T1

更新时间： 2024-02-23 17:38:54

品牌	Logo	应用领域
ANALOGICTECH		/
页数	文件大小	规格书
6页	113K
描述
20V P-Channel Power MOSFET

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技术参数
数据手册

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AAT8107IAS-T1 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	6.5 A	最大漏极电流 (ID)：	6.5 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	2.5 W	子类别：	Other Transistors
表面贴装：	YES

AAT8107IAS-T1 数据手册

AAT8107

20V P-Channel Power MOSFET

™

TrenchDMOS

General Description

Features

The AAT8107 low threshold 20V, P-channel MOS-

FET is a member of AnalogicTech's TrenchDMOS

product family. Using an ultra-high density propri-

etary TrenchDMOS technology, the AAT8107 is

designed for use as a load switch in battery-pow-

ered applications and protection in battery packs.

•

V_DS(MAX)= -20V

I_D(MAX)= -6.5A @ 25°C

Low R_DS(ON)

•

35mΩ @ V_GS= -4.5V

60mΩ @ V_GS= -2.5V

SOP-8L Package

Applications

Top View

•

Battery Packs

Battery-Powered Portable Equipment

Absolute Maximum Ratings

T_A= 25°C, unless otherwise noted.

Symbol

Description

Value

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

-20

±12

T_A= 25°C

T_A= 70°C

±6.5

I_D

Continuous Drain Current @ T_J=150°C¹

±5.2

I_DM

I_S

Pulsed Drain Current²

Continuous Source Current (Source-Drain Diode)¹

±32

-1.7

T_A= 25°C

T_A= 70°C

2.5

P_D

Maximum Power Dissipation¹

1.6

T_J, T_STG

Operating Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Symbol

Description

Value

Units

R_θJA

R_θJA2

R_θJF

Typical Junction-to-Ambient Steady State¹

Maximum Junction-to-Ambient t<10 Seconds¹

Typical Junction-to-Foot¹

°C/W

1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 10-second pulse on a

1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R_θJF+ R_θFA= R_θJAwhere the

foot thermal reference is defined as the normal solder mounting surface of the device's leads. R_θJFis guaranteed by design; however,

R_θCAis determined by the PCB design. Actual maximum continuous current is limited by the application's design.

2. Pulse test: Pulse Width = 300µs.

8107.2005.05.1.1

12 3 4 5 6

中文翻译

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