Datasheet > AAT8513IJS-T1

AAT8513IJS-T1

更新时间： 2024-01-01 10:46:54

品牌	Logo	应用领域
思佳讯 - SKYWORKS		/
页数	文件大小	规格书
6页	149K
描述
Transistor,

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中文翻译

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技术参数
数据手册

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AAT8513IJS-T1 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.06
Base Number Matches：	1

AAT8513IJS-T1 数据手册

AAT8513

28V P-Channel Power MOSFET

General Description

Features

The AAT8513 is a low threshold MOSFET

designed for the battery, cell phone, and PDA mar-

kets. Using AnalogicTech™'s ultra high density

MOSFET process and space saving small outline

J-lead package, performance superior to that nor-

mally found in a TSOP-6 footprint has been

squeezed into the footprint of a SC70 package.

•

V_DS(MAX)= -28V

I_D(MAX)= -2.6A @ 25°C

Low R_DS(ON)

•

130 mΩ @ V_GS= -4.5V

210 mΩ @ V_GS= -2.5V

SC70JW-8 Package

Applications

Top View

•

Battery Packs

Cellular & Cordless Telephones

Battery-powered portable equipment

Absolute Maximum Ratings (T_A=25°C unless otherwise noted)

Symbol

Description

Drain-Source Voltage

Gate-Source Voltage

Value

Units

V_DS

V_GS

-28

±12

±2.6

±2.1

±12

-1.1

1.5

T_A= 25°C

T_A= 70°C

I_D

Continuous Drain Current @ T_J=150°C

I_DM

I_S

Pulsed Drain Current

Continuous Source Current (Source-Drain Diode)

T_A= 25°C

T_A= 70°C

P_D

Maximum Power Dissipation

1.0

T_J, T_STG

Operating Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Symbol

Description

Junction-to-Ambient steady state

Junction-to-Ambient t<5 seconds

Typ

107

Max

130

Units

R_θJA

R_θJA2

R_θJF

°C/W

Junction-to-Foot

8513.2003.09.0.62

12 3 4 5 6

中文翻译

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