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AAT8515IJS-T1 PDF预览

AAT8515IJS-T1

更新时间: 2024-01-12 15:22:25
品牌 Logo 应用领域
ANALOGICTECH 晶体晶体管
页数 文件大小 规格书
6页 79K
描述
20V P-Channel Power MOSFET

AAT8515IJS-T1 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.82Is Samacsys:N
湿度敏感等级:1Base Number Matches:1

AAT8515IJS-T1 数据手册

 浏览型号AAT8515IJS-T1的Datasheet PDF文件第2页浏览型号AAT8515IJS-T1的Datasheet PDF文件第3页浏览型号AAT8515IJS-T1的Datasheet PDF文件第4页浏览型号AAT8515IJS-T1的Datasheet PDF文件第5页浏览型号AAT8515IJS-T1的Datasheet PDF文件第6页 
AAT8515  
20V P-Channel Power MOSFET  
General Description  
Features  
The AAT8515 is a low threshold P-channel MOSFET  
designed for the battery, cell phone, and PDA mar-  
kets. Using AnalogicTech's ultra-high-density MOS-  
FET process and space-saving, small-outline, J-lead  
package, performance superior to that normally  
found in a TSOP-6 footprint has been squeezed into  
the footprint of an SC70JW-8 package.  
Drain-Source Voltage (max): -20V  
Continuous Drain Current1 (max):  
-5.4A @ 25°C  
Low On-Resistance:  
— 35m@ VGS = -4.5V  
— 60m@ VGS = -2.5V  
SC70JW-8 Package  
Applications  
Top View  
Battery Packs  
Battery-Powered Portable Equipment  
Cellular and Cordless Telephones  
D
8
D
D
D
5
7
6
Absolute Maximum Ratings  
TA = 25°C, unless otherwise noted.  
1
2
3
4
S
S
S
G
Symbol  
Description  
Value  
Units  
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
-20  
±12  
V
TA = 25°C  
TA = 70°C  
±5.4  
ID  
Continuous Drain Current @ TJ = 150°C1  
±4.3  
A
IDM  
IS  
Pulsed Drain Current2  
±32  
Continuous Source Current (Source-Drain Diode)1  
Operating Junction Temperature Range  
Storage Temperature Range  
-1.5  
TJ  
-55 to 150  
-55 to 150  
°C  
°C  
TSTG  
Thermal Characteristics1  
Symbol  
Description  
Typ  
Max  
Units  
RθJA  
RθJA2  
RθJF  
Junction-to-Ambient Steady State  
Junction-to-Ambient t<5 Seconds  
Junction-to-Foot  
100  
61  
120  
73.5  
40  
°C/W  
°C/W  
°C/W  
33  
TA = 25°C  
TA = 70°C  
1.7  
1.0  
PD  
Maximum Power Dissipation  
W
1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a  
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the  
foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design; however,  
RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.  
2. Pulse test: Pulse Width = 300µs.  
8515.2005.04.1.0  
1

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