Datasheet > AAT8512IJS-T1

AAT8512IJS-T1

更新时间： 2024-01-20 23:45:54

品牌	Logo	应用领域
ANALOGICTECH		/
页数	文件大小	规格书
6页	146K
描述
Transistor,

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中文翻译

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技术参数
数据手册

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AAT8512IJS-T1 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.58	湿度敏感等级：	1
Base Number Matches：	1

AAT8512IJS-T1 数据手册

AAT8512

28V P-Channel Power MOSFET

General Description

Features

The AAT8512 is a low threshold MOSFET

designed for the battery, cell phone, and PDA mar-

kets. Using AATI's ultra high density MOSFET

process and space saving small outline J-lead

package, performance superior to that normally

found in a TSOP-6 footprint has been squeezed

into the footprint of a SC70 package.

•

V_DS(MAX)= -28V

I_D(MAX)= -3.3A @ 25°C

Low R_DS(ON)

•

90 mΩ @ V_GS= -4.5V

150 mΩ @ V_GS= -2.5V

SC70JW-8 Package

Applications

Top View

•

Battery Packs

Cellular & Cordless Telephones

Battery-powered portable equipment

Absolute Maximum Ratings (T_A=25°C unless otherwise noted)

Symbol

Description

Drain-Source Voltage

Gate-Source Voltage

Value

Units

V_DS

V_GS

-28

±12

±3.3

±2.6

±20

-0.9

1.6

T_A= 25°C

T_A= 70°C

I_D

Continuous Drain Current @ T_J=150°C

I_DM

I_S

Pulsed Drain Current

Continuous Source Current (Source-Drain Diode)

T_A= 25°C

T_A= 70°C

P_D

Maximum Power Dissipation

1.0

T_J, T_STG

Operating Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Symbol

Description

Junction-to-Ambient steady state

Junction-to-Ambient t<5 seconds

Typ

102

Max

125

Units

R_θJA

R_θJA2

R_θJF

°C/W

Junction-to-Foot

8512.2003.08.0.61

12 3 4 5 6

中文翻译

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