Datasheet > YJG105N03A

YJG105N03A

更新时间： 2024-04-09 19:02:06

品牌	Logo	应用领域
扬杰 - YANGJIE		光电二极管
页数	文件大小	规格书
7页	846K
描述
PDFN5060-8L

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YJG105N03A 数据手册

YJG105N03A

Electrical Characteristics (T =25℃ unless otherwise noted)

■

Parameter

Symbol

Conditions

Min

Typ

Max

Units

Static Parameter

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

Gate Threshold Voltage

BV_DSS

V_GS= 0V, I_D=250μA

V_DS=30V,V_GS=0V

V_GS= ±20V, V_DS=0V

V_DS= V_GS, I_D=250μA

V_GS= 10V, I_D=20A

V_GS= 4.5V, I_D=15A

I_S=20A,V_GS=0V

I_DSS

±100

2.5

3.0

4.0

1.2

μA

I_GSS

V_GS(th)

1.0

1.5

2.45

2.9

Static Drain-Source On-Resistance

R_DS(ON)

mΩ

Diode Forward Voltage

Gate resistance

V_SD

R_G

I_S

0.85

1.5

f=1MHz

Maximum Body-Diode Continuous Current

Dynamic Parameters

Input Capacitance

105

C_iss

C_oss

C_rss

4401

581

Output Capacitance

V_DS=15V,V_GS=0V,f=1MHZ

Reverse Transfer Capacitance

Switching Parameters

Total Gate Charge

439

Q_g

Q_gs

Q_gd

Q_rr

t_rr

49.5

10.4

8.9

7.5

Gate-Source Charge

Gate-Drain Charge

V_GS=10V,V_DS=20V,I_D=20A

Reverse Recovery Charge

Reverse Recovery Time

Turn-on Delay Time

I_F=20A, di/dt=500A/us

t_D(on)

Turn-on Rise Time

t_r

V_GS=10V, V_DD=15V, I_D=2A,R_GEN=3Ω

Turn-off Delay Time

Turn-off fall Time

t_D(off)

t_f

A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%.

R_{θJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder}

R_{θJC is guaranteed by design, while}R_{θJA is determined by the board design. The maximum rating presented}

mounting surface of the drain pins.

here is based on mounting on a 1 in 2 pad of 2oz copper.

2 / 7

S-E619

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev.3.6,14-Nov-23

123 4 5 6 7

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