Datasheet > YJG12NP10BQ

YJG12NP10BQ

更新时间： 2024-09-18 15:18:55

品牌	Logo	应用领域
扬杰 - YANGJIE		光电二极管
页数	文件大小	规格书
10页	448K
描述
PDFN5060-8L

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YJG12NP10BQ 数据手册

RoHS

COMPLIANT

YJG12NP10BQ

N-Channel and P-Channel Complementary MOSFET

Product Summary

NMOS

● V_DS

100V

40A

● I_D

● R_DS(ON)( at V_GS=10V)

● R_DS(ON)( at V_GS=4.5V)

● 100% EAS Tested

● 100% ▽V^DSTested

＜24mΩ

＜30mΩ

PMOS

● V_DS

-100V

● I_D

-12A

● R_DS(ON)( at V_GS=-10V)

● R_DS(ON)( at V_GS=-4.5V)

● 100% EAS Tested

● 100% ▽V^DSTested

＜115mΩ

＜138mΩ

General Description

● Excellent package for heat dissipation

● Moisture Sensitivity Level 1

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● Load switching

● Hard switched and high frequency circuits

● Uninterruptible power supply

Absolute Maximum Ratings (T =25℃ unless otherwise noted)

■

Parameter

Symbol

NMOS

PMOS

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

100

±20

7.5

-100

±20

-3.3

-2.0

-12

T_A=25℃

4.7

T_A=100℃

T_C=25℃

Drain Current

I_D

-7.6

-40

T_C=100℃

Pulsed Drain Current ^A

Avalanche energy ^B

I_DM

EAS

2.5

T_A=25℃

T_A=100℃

T_C=25℃

T_C=100℃

Total Power Dissipation ^C

P_D

104

Junction and Storage Temperature Range

T_J,T_STG

-55～+150

℃

■Thermal resistance

NMOS

PMOS

Parameter

Symbol

Units

Typ

Max

Typ

Max

Thermal Resistance Junction-to-Ambient ^D

Thermal Resistance Junction-to-Case

Steady-State

R_θJA

R_θJC

℃/W

1.2

1.5

1.8

1 / 10

Yangzhou Yangjie Electronic Technology Co., Ltd.

S-D281

Rev.1.0,18-Apr-23

www.21yangjie.com

12 3 4 5 6 7...10

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