Datasheet > YJG125G04HQ

YJG125G04HQ

更新时间： 2024-04-09 19:00:39

品牌	Logo	应用领域
扬杰 - YANGJIE		光电二极管
页数	文件大小	规格书
7页	312K
描述
PDFN5060-8L

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

YJG125G04HQ 数据手册

RoHS

COMPLIANT

YJG125G04HQ

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

40V

● I_D

125A

● R_DS(ON)( at V_GS=10V)

● 100% EAS Tested

● 100% ▽V^DSTested

＜3.1mΩ

General Description

● Split gate trench MOSFET technology

● Excellent package for heat dissipation

● High density cell design for low R_DS(ON)

● Moisture Sensitivity Level 1

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

● Part no. with suffix ”Q” means AEC-Q101 qualified

Applications

● Power switching application

● Uninterruptible power supply

● 12V Automotive systems

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

±20

T_A=25℃

T_A=100℃

T_C=25℃

Drain Current

I_D

125

T_C=100℃

Pulsed Drain Current ^A

Avalanche energy ^B

I_DM

450

156

2.7

EAS

T_A=25℃

T_A=100℃

T_C=25℃

T_C=100℃

1.3

Total Power Dissipation ^C

P_D

Junction and Storage Temperature Range

T_J,T_STG

-55～+175

℃

■Thermal resistance

Parameter

Symbol

R_θJA

Typ

Max

Units

Thermal Resistance Junction-to-Ambient ^D

Thermal Resistance Junction-to-Case

Steady-State

℃/W

R_θJC

1.5

1.8

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

DELIVERY

MODE

PREFERED P/N

Marking

CODE

YJG125G04HQ

YJG125G04H

5000

10000

100000

13“ reel

1 / 7

S-D387

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev.1.0,25-Dec-23

12 3 4 5 6 7

下载PDF

与YJG125G04HQ相关器件

型号	品牌	描述	获取价格	数据表
YJG12NP10A	YANGJIE	DFN5060-8L	获取价格
YJG12NP10B	YANGJIE	PDFN5060-8L-Dual	获取价格
YJG12NP10BQ	YANGJIE	PDFN5060-8L	获取价格
YJG130G04C	YANGJIE	PDFN5060-8L	获取价格
YJG130G04CQ	YANGJIE	PDFN5060-8L	获取价格
YJG140G06A	YANGJIE	PDFN5060-8L	获取价格