Datasheet > YJG110G10BQ

YJG110G10BQ

更新时间： 2024-09-18 15:19:15

品牌	Logo	应用领域
扬杰 - YANGJIE		光电二极管
页数	文件大小	规格书
7页	346K
描述
PDFN5060-8L

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中文翻译

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YJG110G10BQ 数据手册

RoHS

COMPLIANT

YJG110G10BQ

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

100V

● I_D

110A

● R_DS(ON)( at V_GS=10V)

● R_DS(ON)( at V_GS=6V)

● 100% EAS Tested

● 100% ▽V^DSTested

＜5.5mΩ

＜7.0mΩ

General Description

● Split gate trench MOSFET technology

● High density cell design for low R_DS(ON)

● Moisture Sensitivity Level 3

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

● Part no. with suffix ”Q” means AEC-Q101 qualified

Applications

● Power switching application

● Uninterruptible power supply

● DC-DC convertor

Absolute Maximum Ratings (T =25℃ unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

100

±20

T_A=25℃

9.5

T_A=100℃

T_C=25℃

Drain Current

I_D

110

T_C=100℃

Pulsed Drain Current ^A

Avalanche energy ^B

I_DM

380

400

2.4

EAS

T_A=25℃

T_A=100℃

T_C=25℃

T_C=100℃

0.9

Total Power Dissipation ^C

P_D

113

Junction and Storage Temperature Range

T_J,T_STG

-55～+150

℃

■Thermal resistance

Parameter

Symbol

R_θJA

Typ

Max

Units

Thermal Resistance Junction-to-Ambient ^D

Thermal Resistance Junction-to-Case

Steady-State

℃/W

R_θJC

0.88

1.1

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

DELIVERY

MODE

PREFERED P/N

Marking

CODE

YJG110G10BQ

YJG110G10B

5000

10000

100000

13“ reel

1 / 7

S-E276

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev.1.0,15-Mar-23

12 3 4 5 6 7

中文翻译

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