RoHS
COMPLIANT
YJG15GP10A
P-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
-100V
● ID
-15A
● RDS(ON)( at VGS=-10V)
● RDS(ON)( at VGS=-4.5V)
● 100% EAS Tested
● 100% ▽VDS Tested
<110 mohm
<120 mohm
General Description
● Split gate trench MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
● Moisture Sensitivity Level 1
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● DC-DC Converters
● Power management functions
Absolute Maximum Ratings (T =25℃unless otherwise noted)
■
A
Parameter
Symbol
Limit
-100
±20
-3
Unit
V
Drain-source Voltage
Gate-source Voltage
VDS
VGS
V
TA=25℃
-2
TA=100℃
TC=25℃
TC=100℃
Drain Current
ID
A
-15
-9.6
-30
Pulsed Drain Current A
Avalanche energy B
IDM
A
EAS
64
mJ
2.5
TA=25℃
TA=100℃
TC=25℃
TC=100℃
1
Total Power Dissipation C
PD
W
60
24
Junction and Storage Temperature Range
TJ ,TSTG
-55~+150
℃
■Thermal resistance
Parameter
Symbol
RθJA
Typ
15
Max
20
Units
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Case
t≤10S
Steady-State
Steady-State
40
50
℃/W
RθJC
1.7
2.1
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
PREFERED P/N
Marking
DELIVERY MODE
CODE
YJG15GP10A
F1
YJG15GP10A
5000
10000
100000
13“ reel
1 / 7
S-E091
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
Rev.3.8,8-Sep-23