Datasheet > YJG122GP10HHQ

YJG122GP10HHQ

更新时间： 2024-04-09 19:01:15

品牌	Logo	应用领域
扬杰 - YANGJIE		光电二极管
页数	文件大小	规格书
7页	583K
描述
PDFN5060-8L

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YJG122GP10HHQ 数据手册

RoHS

COMPLIANT

YJG122GP10HHQ

P-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

-100 V

-17 A

● I_D

● R_DS(ON)( at V_GS=-10V)

● 100% EAS Tested

● 100% ▽VDS Tested

＜122mΩ

General Description

● Low R_DS(on)& FOM

● Excellent stability and uniformity

● Moisture Sensitivity Level 1

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

● Part no. with suffix ”Q” means AEC-Q101 qualified

Applications

● Power management

● Portable equipment

● 12V Automotive systems

Absolute Maximum Ratings (T =25℃ unless otherwise noted)

■

Parameter

Symbol

Limit

-100

±20

-3

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

T_A=25℃

-1.9

-17

T_A=100℃

T_C=25℃

Drain Current

I_D

-11

T_C=100℃

Pulsed Drain Current ^A

Avalanche energy ^B

I_DM

-36

EAS

2.1

T_A=25℃

T_A=100℃

T_C=25℃

T_C=100℃

0.8

Total Power Dissipation ^C

P_D

Junction and Storage Temperature Range

T_J,T_STG

-55～+150

℃

■Thermal resistance

Parameter

Symbol

R_θJA

Typ

Max

Units

Thermal Resistance Junction-to-Ambient ^D

Thermal Resistance Junction-to-Case

Steady-State

℃/W

R_θJC

1.5

1.8

1 / 7

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

S-D404

Rev.1.0,01-Feb-24

12 3 4 5 6 7

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