RoHS
COMPLIANT
YJG10NP10B
N-Channel and P-Channel Complementary MOSFET
Product Summary
NMOS
● VDS
100V
● ID
10A
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
<100mΩ
<107mΩ
PMOS
● VDS
-100V
● ID
-12A
● RDS(ON)( at VGS=-10V)
● RDS(ON)( at VGS=-4.5V)
<110mΩ
<120mΩ
● 100% EAS Tested
General Description
● Excellent package for heat dissipation
● Moisture Sensitivity Level 1
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● Load switching
● Hard switched and high frequency circuits
● Uninterruptible power supply
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
NMOS
PMOS
-100
±20
Unit
V
Drain-source Voltage
Gate-source Voltage
VDS
100
VGS
±20
V
2.6
-2.8
-1.8
-12
TA=25℃
1.6
TA=100℃
TC=25℃
Drain Current
ID
A
10
6.3
-7.6
-40
TC =100℃
Pulsed Drain Current A
Avalanche energy B
IDM
25
A
EAS
12
49
mJ
2
0.8
2
TA=25℃
TA=100℃
TC=25℃
TC =100℃
0.8
Total Power Dissipation C
PD
W
39
44
15
17
Junction and Storage Temperature Range
TJ ,TSTG
-55~+150
-55~+150
℃
■Thermal resistance
NMOS
PMOS
Parameter
Symbol
Units
Typ
Max
Typ
Max
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Case
Steady-State
Steady-State
RθJA
RθJC
50
60
50
60
℃/W
2.6
3.2
2.3
2.8
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
PREFERED P/N
Marking
DELIVERY MODE
CODE
YJG10NP10B
F1
YJG10NP10B
5000
10000
100000
13“ reel
1 / 10
S-E451
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
Rev.1.0,16-Nov-23