RoHS
COMPLIANT
YJG170G03AJR
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
30V
● ID
170A
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
● 100% EAS Tested
● 100% ▽VDS Tested
<1.3mΩ
<2.5mΩ
General Description
● Split gate trench MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
● Moisture Sensitivity Level 3
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● Motor Drivers
● Switching Voltage Regulators
● DC-DC convertor
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
VDS
VGS
30
±20
30
V
V
TA=25℃
19
TA=100℃
TC=25℃
Drain Current
ID
A
170
107.5
400
645
2.5
TC =100℃
Pulsed Drain Current A
Avalanche energy B
IDM
A
EAS
mJ
TA=25℃
TA=100℃
TC=25℃
TC =100℃
1
Total Power Dissipation C
PD
W
104
41
Junction and Storage Temperature Range
TJ ,TSTG
-55~+150
℃
■Thermal resistance
Parameter
Symbol
RθJA
Typ
40
1
Max
50
Units
Thermal Resistance Junction-to-Ambient D
Steady-State
Steady-State
℃/W
Thermal Resistance Junction-to-Case
RθJC
1.2
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
YJG170G03AJR
F1
170G03AJR
5000
10000
100000
13“ reel
1 / 8
S-E300
Rev.1.0,24-Feb-23
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com