RoHS
COMPLIANT
YJG150N03A
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
30 V
● ID
150 A
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
● 100% EAS Tested
● 100% ▽VDS Tested
<2.0 mohm
<3.3 mohm
General Description
● Trench Power MV MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
● Moisture Sensitivity Level 1
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● DC-DC Converters
● Power management functions
● Backlighting
Absolute Maximum Ratings (T =25℃unless otherwise noted)
■
A
Parameter
Symbol
Limit
30
Unit
V
Drain-source Voltage
Gate-source Voltage
VDS
±20
30
VGS
V
TA=25℃
19
TA=100℃
TC=25℃
TC=100℃
Drain Current
ID
A
A
150
95
Pulsed Drain Current A
Total Power Dissipation B
Single Pulse Avalanche Energy D
IDM
400
2.7
TA=25℃
TA=100℃
TC=25℃
TC =100℃
1
PD
W
69
27.6
400
1.8
EAS
RθJC
mJ
℃/ W
℃/ W
℃
Thermal Resistance Junction-to-Case
Thermal Resistance Junction-to-AmbientC
Junction and Storage Temperature Range
RθJA
46.5
-55~+150
TJ ,TSTG
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
PREFERED P/N
Marking
DELIVERY MODE
CODE
YJG150N03A
F1
YJG150N03A
5000
10000
100000
13“ reel
1 / 7
S-E044
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
Rev.3.5,24-Oct-23