RECOMMEND
YJG95G10A
FOR NEW DESIGN
RoHS
COMPLIANT
YJG110G10A
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
100V
110A
● ID
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
● 100% EAS Tested
● 100% ▽VDS Tested
<5mΩ
<6.5mΩ
General Description
● Split gate trench MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
● Moisture Sensitivity Level 1
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● Power switching application
● Uninterruptible power supply
● DC-DC convertor
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
VDS
VGS
100
±20
V
V
15
TA=25℃
9.5
TA=100℃
TC=25℃
Drain Current
ID
A
110
70
TC =100℃
Pulsed Drain Current A
Avalanche energy B
IDM
440
400
2.4
A
EAS
mJ
TA=25℃
TA=100℃
TC=25℃
TC =100℃
0.9
Total Power Dissipation C
PD
W
113
45
-55~+150
Junction and Storage Temperature Range
TJ ,TSTG
℃
■Thermal resistance
Parameter
Symbol
RθJA
Typ
42
Max
53
Units
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Case
Steady-State
Steady-State
℃/W
RθJC
0.88
1.1
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
YJG110G10A
F1
YJG110G10A
5000
10000
100000
13“ reel
1 / 8
S-E188
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
Rev.1.3,4-Mar-24