Datasheet > XP1057-BD

XP1057-BD

更新时间： 2024-11-08 06:01:47

品牌	Logo	应用领域
MIMIX		放大器功率放大器
页数	文件大小	规格书
12页	1402K
描述
13.5-16.0 GHz GaAs MMIC Power Amplifier

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XP1057-BD 数据手册

13.5-16.0 GHz GaAs MMIC

Power Amplifier

January 2010 - Rev 04-Jan-10

P1057-BD

Features

Chip Device Layout

10W Power Amplifier

Dual Sided Bias Architecture

17 dB Small Signal Gain

+39.0 dBm P1dB Compression Point

+41.0 dBm Pulsed Saturated Output Power

+48.0 dBm Output Third Order Intercept

100% On-Wafer DC, RF and Output Power Testing

100% Visual Inspection to MIL-STD-883

Method 2010

XP1057-BD

General Description

Mimix Broadband’s three stage 13.5-16.0 GHz GaAs

MMIC power amplifier has a small signal gain of 17.0

dB with +48.0 dBm output third order intercept.This

MMIC uses Mimix Broadband’s GaAs PHEMT device

model technology, and is based upon optical

lithography to ensure high repeatability and

uniformity.The chip has surface passivation to protect

and provide a rugged part with backside via holes and

gold metallization to allow either a conductive epoxy

or eutectic solder die attach process.This device is well

suited for Military, Space, Microwave Point-to-Point

Radio, SATCOM and VSAT applications.

Absolute Maximum Ratings¹

Supply Voltage (Vd)

Supply Current (Id1,2,3)

Gate Bias Voltage (Vg)

Input Power (Pin)

+8.0 VDC

600,1400,3000 mA

+0.3 VDC

+33.0 dBm

Storage Temperature (Tstg) -65 to +165 ºC

Operating Temperature (Ta) -55 to +85 ºC

Channel Temperature (Tch)¹175 ºC

(1) Channel temperature affects a device’s MTTF. It is

recommended to keep channel temperature as low as possible

for maximum life

Electrical Characteristics (AmbientTemperatureT = 25 ^oC)

Parameter

Units

Min

Typ

Max

Frequency Range (f)

GHz

13.5

16.0

Input Return Loss (S11)

Output Return Loss (S22)

10.0

Small Signal Gain (S21)²

Gain Flatness (delta S21)

17.0

+/-1.0

Reverse Isolation (S12)

60.0

Output Power for 1dB Compression Point (P1dB)

Output Third Order Intermods (OIP3)

dBm

+39.0

+48.0

Saturated Output Power (Psat)²

Drain Bias Voltage (Vd1,2,3)

dBm

VDC

+40.0

+7.5

+7.8

Gate Bias Voltage (Vg1,2,3)

VDC

-1.5

-0.8

0.0

Supply Current (Id1) (Vd=7.5V, Vg=-0.8 V Typical)

Supply Current (Id2) (Vd=7.5V, Vg=-0.8 V Typical)

Supply Current (Id3) (Vd=7.5V, Vg=-0.8 V Typical)

(2) Measured on wafer pulsed.

500

550

1000

2200

1200

2600

Page 1 of 12

Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

12 3 4 5 6 7...12

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与XP1057-BD相关器件

型号	品牌	获取价格	描述	数据表
XP1057-BD-000V	MIMIX	获取价格	13.5-16.0 GHz GaAs MMIC Power Amplifier
XP1057-BD-EV1	MIMIX	获取价格	13.5-16.0 GHz GaAs MMIC Power Amplifier
XP1058-BD	MIMIX	获取价格	14.5-16.0 GHz GaAs MMIC Power Amplifier
XP1058-BD-000V	MIMIX	获取价格	14.5-16.0 GHz GaAs MMIC Power Amplifier
XP1058-BD-EV1	MIMIX	获取价格	14.5-16.0 GHz GaAs MMIC Power Amplifier
XP1059-BD-000V	MIMIX	获取价格	Wide Band High Power Amplifier, 13500MHz Min, 15000MHz Max, ROHS COMPLIANT, PLASTIC PACKAG
XP1065-QJ-0G00	MIMIX	获取价格	Amplifier,
XP1065-QJ-0G0T	MIMIX	获取价格	Narrow Band Medium Power Amplifier, 2300MHz Min, 2700MHz Max, 6 X 6 MM, ROHS COMPLIANT, QF
XP1066-SD	MIMIX	获取价格	1W, High Linearity InGaP HBT Amplifier
XP1066-SD-0G00	MIMIX	获取价格	Narrow Band Medium Power Amplifier, 1800MHz Min, 2200MHz Max, ROHS COMPLIANT, SOIC-8

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