5秒后页面跳转
XP1057-BD-EV1 PDF预览

XP1057-BD-EV1

更新时间: 2022-12-23 10:31:05
品牌 Logo 应用领域
MIMIX 放大器功率放大器
页数 文件大小 规格书
12页 1402K
描述
13.5-16.0 GHz GaAs MMIC Power Amplifier

XP1057-BD-EV1 数据手册

 浏览型号XP1057-BD-EV1的Datasheet PDF文件第2页浏览型号XP1057-BD-EV1的Datasheet PDF文件第3页浏览型号XP1057-BD-EV1的Datasheet PDF文件第4页浏览型号XP1057-BD-EV1的Datasheet PDF文件第5页浏览型号XP1057-BD-EV1的Datasheet PDF文件第6页浏览型号XP1057-BD-EV1的Datasheet PDF文件第7页 
13.5-16.0 GHz GaAs MMIC  
Power Amplifier  
January 2010 - Rev 04-Jan-10  
P1057-BD  
Features  
Chip Device Layout  
10W Power Amplifier  
Dual Sided Bias Architecture  
17 dB Small Signal Gain  
+39.0 dBm P1dB Compression Point  
+41.0 dBm Pulsed Saturated Output Power  
+48.0 dBm Output Third Order Intercept  
100% On-Wafer DC, RF and Output Power Testing  
100% Visual Inspection to MIL-STD-883  
Method 2010  
XP1057-BD  
General Description  
Mimix Broadband’s three stage 13.5-16.0 GHz GaAs  
MMIC power amplifier has a small signal gain of 17.0  
dB with +48.0 dBm output third order intercept.This  
MMIC uses Mimix Broadband’s GaAs PHEMT device  
model technology, and is based upon optical  
lithography to ensure high repeatability and  
uniformity.The chip has surface passivation to protect  
and provide a rugged part with backside via holes and  
gold metallization to allow either a conductive epoxy  
or eutectic solder die attach process.This device is well  
suited for Military, Space, Microwave Point-to-Point  
Radio, SATCOM and VSAT applications.  
Absolute Maximum Ratings1  
Supply Voltage (Vd)  
Supply Current (Id1,2,3)  
Gate Bias Voltage (Vg)  
Input Power (Pin)  
+8.0 VDC  
600,1400,3000 mA  
+0.3 VDC  
+33.0 dBm  
Storage Temperature (Tstg) -65 to +165 ºC  
Operating Temperature (Ta) -55 to +85 ºC  
Channel Temperature (Tch)1 175 ºC  
(1) Channel temperature affects a device’s MTTF. It is  
recommended to keep channel temperature as low as possible  
for maximum life  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Parameter  
Units  
Min  
Typ  
Max  
Frequency Range (f)  
GHz  
13.5  
-
16.0  
Input Return Loss (S11)  
Output Return Loss (S22)  
dB  
dB  
-
-
10.0  
10.0  
-
-
Small Signal Gain (S21)2  
Gain Flatness (delta S21)  
dB  
dB  
-
-
17.0  
-
-
+/-1.0  
Reverse Isolation (S12)  
dB  
-
-
-
60.0  
-
-
-
Output Power for 1dB Compression Point (P1dB)  
Output Third Order Intermods (OIP3)  
dBm  
dBm  
+39.0  
+48.0  
Saturated Output Power (Psat)2  
Drain Bias Voltage (Vd1,2,3)  
dBm  
VDC  
-
-
+40.0  
+7.5  
-
+7.8  
Gate Bias Voltage (Vg1,2,3)  
VDC  
mA  
mA  
mA  
-1.5  
-0.8  
0.0  
Supply Current (Id1) (Vd=7.5V, Vg=-0.8 V Typical)  
Supply Current (Id2) (Vd=7.5V, Vg=-0.8 V Typical)  
Supply Current (Id3) (Vd=7.5V, Vg=-0.8 V Typical)  
(2) Measured on wafer pulsed.  
-
-
-
500  
550  
1000  
2200  
1200  
2600  
Page 1 of 12  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  

与XP1057-BD-EV1相关器件

型号 品牌 描述 获取价格 数据表
XP1058-BD MIMIX 14.5-16.0 GHz GaAs MMIC Power Amplifier

获取价格

XP1058-BD-000V MIMIX 14.5-16.0 GHz GaAs MMIC Power Amplifier

获取价格

XP1058-BD-EV1 MIMIX 14.5-16.0 GHz GaAs MMIC Power Amplifier

获取价格

XP1059-BD-000V MIMIX Wide Band High Power Amplifier, 13500MHz Min, 15000MHz Max, ROHS COMPLIANT, PLASTIC PACKAG

获取价格

XP1065-QJ-0G00 MIMIX Amplifier,

获取价格

XP1065-QJ-0G0T MIMIX Narrow Band Medium Power Amplifier, 2300MHz Min, 2700MHz Max, 6 X 6 MM, ROHS COMPLIANT, QF

获取价格