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VS-MBR1645PBF PDF预览

VS-MBR1645PBF

更新时间: 2024-11-12 21:10:51
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
7页 146K
描述
DIODE SCHOTTKY 45V 16A TO220AC

VS-MBR1645PBF 技术参数

生命周期:Lifetime Buy包装说明:R-PSFM-T2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.7
其他特性:FREE WHEELING DIODE应用:GENERAL PURPOSE
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.63 VJEDEC-95代码:TO-220AC
JESD-30 代码:R-PSFM-T2JESD-609代码:e3
最大非重复峰值正向电流:1800 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:16 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE最大重复峰值反向电压:45 V
最大反向电流:200 µA表面贴装:NO
技术:SCHOTTKY端子面层:MATTE TIN (SN) - WITH NICKEL (NI) BARRIER
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

VS-MBR1645PBF 数据手册

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VS-MBR16...PbF Series, VS-MBR16...-N3 Series  
www.vishay.com  
Vishay Semiconductors  
Schottky Rectifier, 16 A  
FEATURES  
Base  
• 150 °C TJ operation  
cathode  
2
• Low forward voltage drop  
• High frequency operation  
• High  
purity,  
high  
temperature  
epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
1
3
Cathode Anode  
TO-220AC  
• Guard ring for enhanced ruggedness and long  
term reliability  
• Compliant to RoHS Directive 2002/95/EC  
PRODUCT SUMMARY  
• Designed and qualified according to JEDEC-JESD47  
Package  
TO-220AC  
16 A  
• Halogen-free according to IEC 61249-2-21 definition  
(-N3 only)  
IF(AV)  
VR  
35 V, 45 V  
0.57 V  
VF at IF  
DESCRIPTION  
I
RM max.  
40 mA at 125 °C  
150 °C  
The VS-MBR16... Schottky rectifier has been optimized for  
low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 150 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
TJ max.  
Diode variation  
EAS  
Single die  
24 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
16  
UNITS  
Rectangular waveform  
A
V
35/45  
tp = 5 μs sine  
16 Apk, TJ = 125 °C  
Range  
1800  
A
VF  
0.57  
V
TJ  
- 65 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-MBR1635PbF  
VS-MBR1635-N3  
VS-MBR1645PbF  
VS-MBR1645-N3  
UNITS  
Maximum DC reverse  
voltage  
VR  
35  
35  
45  
45  
V
Maximum working peak  
reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
TC = 134 °C, rated VR  
VALUES  
UNITS  
Maximum average forward current  
IF(AV)  
16  
A
Following any rated load  
condition and with rated  
5 µs sine or 3 µs rect. pulse  
1800  
VRRM applied  
Non-repetitive peak surge current  
IFSM  
A
Surge applied at rated load condition half wave  
single phase, 60 Hz  
150  
24  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 3.6 A, L = 3.7 mH  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
3.6  
Revision: 29-Aug-11  
Document Number: 94286  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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