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VS-MBR20100CTKPBF

更新时间： 2024-01-10 03:48:35
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
7页 177K
描述
SCHOTTKY - TO-220-E3

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VS-MBR20100CTKPBF 技术参数

生命周期：Obsolete包装说明：R-PSFM-T3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.8
其他特性：FREE WHEELING DIODE应用：GENERAL PURPOSE
外壳连接：CATHODE配置：COMMON CATHODE, 2 ELEMENTS
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.95 VJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
最大非重复峰值正向电流：850 A元件数量：2
相数：1端子数量：3
最高工作温度：150 °C最低工作温度：-65 °C
最大输出电流：10 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT APPLICABLE最大重复峰值反向电压：100 V
最大反向电流：100 µA表面贴装：NO
技术：SCHOTTKY端子面层：MATTE TIN OVER NICKEL
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT APPLICABLEBase Number Matches：1

VS-MBR20100CTKPBF 数据手册

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VS-MBR20...CTKPbF Series, VS-MBR20...CTK-N3 Series  
www.vishay.com  
Vishay Semiconductors  
Schottky Rectifier, 2 x 10 A  
FEATURES  
• 150 °C TJ operation  
Base  
common  
cathode  
2
• Low forward voltage drop  
• High frequency operation  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
Anode  
Anode  
2
Common  
cathode  
1
3
• Guard ring for enhanced ruggedness and long  
term reliability  
TO-220AB  
• Compliant to RoHS Directive 2002/95/EC  
PRODUCT SUMMARY  
• Designed and qualified according to JEDEC-JESD47  
Package  
TO-220AB  
2 x 10 A  
• Halogen-free according to IEC 61249-2-21 definition  
(-N3 only)  
IF(AV)  
VR  
80 V, 90 V, 100 V  
0.65 V  
DESCRIPTION  
VF at IF  
I
RM max.  
6 mA at 125 °C  
150 °C  
This center tap Schottky rectifier series has been optimized  
for low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 150 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
TJ max.  
Diode variation  
EAS  
Common cathode  
24 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFRM  
IFSM  
CHARACTERISTICS  
VALUES  
20  
UNITS  
Rectangular waveform (per device)  
A
V
80 to 100  
20  
TC = 133 °C (per leg)  
tp = 5 μs sine  
A
850  
VF  
10 Apk, TJ = 125 °C  
Range  
0.65  
V
TJ  
- 65 to 150  
°C  
VOLTAGE RATINGS  
VS-  
VS-  
VS-  
VS-  
VS-  
VS-  
PARAMETER  
SYMBOL  
UNITS  
MBR2080CTKPbF MBR2080CTK-N3 MBR2090CTKPbF MBR2090CTK-N3 MBR20100CTKPbF MBR20100CTK-N3  
Maximum DC  
reverse voltage  
VR  
80  
80  
90  
90  
100  
100  
V
Maximum  
working peak  
reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
TC = 133 °C, rated VR  
Rated VR, square wave, 20 kHz, TC = 133 °C  
VALUES  
UNITS  
per leg  
10  
20  
20  
Maximum average  
forward current  
IF(AV)  
IFRM  
per device  
Peak repetitive forward current per leg  
Following any rated load  
condition and with rated  
A
5 µs sine or 3 µs rect. pulse  
850  
150  
V
RRM applied  
Non-repetitive peak surge current  
IFSM  
Surge applied at rated load conditions half wave,  
single phase, 60 Hz  
Peak repetitive reverse surge current  
Non-repetitive avalanche energy per leg  
IRRM  
EAS  
2.0 µs, 1.0 kHz  
0.5  
24  
TJ = 25 °C, IAS = 2 A, L = 12 mH  
mJ  
Revision: 29-Aug-11  
Document Number: 94287  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567

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