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VS-MBR2035CT-1PBF PDF预览

VS-MBR2035CT-1PBF

更新时间: 2024-11-12 15:57:47
品牌 Logo 应用领域
威世 - VISHAY 高功率电源二极管
页数 文件大小 规格书
8页 284K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 35V V(RRM), Silicon, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN

VS-MBR2035CT-1PBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-262AA
包装说明:R-PSIP-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.38
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY应用:HIGH POWER
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.57 VJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:1060 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:35 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

VS-MBR2035CT-1PBF 数据手册

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VS-MBRB20..CTPbF, VS-MBR20..CT-1PbF Series  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 2 x 10 A  
FEATURES  
• 150 °C TJ operation  
• Center tap D2PAK and TO-262 packages  
• Low forward voltage drop  
• High frequency operation  
D2PAK  
TO-262  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
Base  
common  
cathode  
Base  
common  
cathode  
• Guard ring for enhanced ruggedness and long  
term reliability  
2
2
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
• AEC-Q101 qualified  
2
2
1
1
3
3
Common  
cathode  
Common  
cathode  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Anode  
Anode  
Anode  
Anode  
VS-MBR20..CT-1PbF  
VS-MBRB20..CTPbF  
DESCRIPTION  
This center tap Schottky rectifier has been optimized for low  
reverse leakage at high temperature. The proprietary barrier  
technology allows for reliable operation up to 150 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
PRODUCT SUMMARY  
Package  
TO-263AB (D2PAK), TO-262AA  
2 x 10 A  
IF(AV)  
VR  
35 V, 45 V  
VF at IF  
IRM max.  
TJ max.  
Diode variation  
EAS  
0.72 V  
15 mA at 125 °C  
150 °C  
Common cathode  
8 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
IFRM  
CHARACTERISTICS  
Rectangular waveform (per device)  
TC = 135 °C (per leg)  
VALUES  
20  
UNITS  
A
20  
VRRM  
IFSM  
35, 45  
1060  
V
A
tp = 5 μs sine  
10 Apk, TJ = 125 °C  
Range  
VF  
0.57  
V
TJ  
-65 to +150  
°C  
VOLTAGE RATINGS  
VS-MBRB2035CTPbF  
VS-MBR2035CT-1PbF  
VS-MBRB2045CTPbF  
VS-MBR2045CT-1PbF  
PARAMETER  
SYMBOL  
UNITS  
Maximum DC reverse voltage  
VR  
35  
45  
V
Maximum working peak reverse voltage  
VRWM  
Revision: 16-Jan-12  
Document Number: 94305  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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