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VS-MBR2080CTKPbF

更新时间： 2024-01-16 06:53:34
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威世 - VISHAY /
页数 文件大小 规格书
7页 176K
描述
Low forward voltage drop

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VS-MBR2080CTKPbF 数据手册

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VS-MBR20...CTKPbF Series, VS-MBR20...CTK-N3 Series  
www.vishay.com  
Vishay Semiconductors  
Schottky Rectifier, 2 x 10 A  
FEATURES  
• 150 °C TJ operation  
Base  
common  
cathode  
2
• Low forward voltage drop  
• High frequency operation  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
Anode  
Anode  
2
Common  
cathode  
1
3
• Guard ring for enhanced ruggedness and long  
term reliability  
TO-220AB  
• Compliant to RoHS Directive 2002/95/EC  
PRODUCT SUMMARY  
• Designed and qualified according to JEDEC-JESD47  
Package  
TO-220AB  
2 x 10 A  
• Halogen-free according to IEC 61249-2-21 definition  
(-N3 only)  
IF(AV)  
VR  
80 V, 90 V, 100 V  
0.65 V  
DESCRIPTION  
VF at IF  
I
RM max.  
6 mA at 125 °C  
150 °C  
This center tap Schottky rectifier series has been optimized  
for low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 150 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
TJ max.  
Diode variation  
EAS  
Common cathode  
24 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFRM  
IFSM  
CHARACTERISTICS  
VALUES  
20  
UNITS  
Rectangular waveform (per device)  
A
V
80 to 100  
20  
TC = 133 °C (per leg)  
tp = 5 μs sine  
A
850  
VF  
10 Apk, TJ = 125 °C  
Range  
0.65  
V
TJ  
- 65 to 150  
°C  
VOLTAGE RATINGS  
VS-  
VS-  
VS-  
VS-  
VS-  
VS-  
PARAMETER  
SYMBOL  
UNITS  
MBR2080CTKPbF MBR2080CTK-N3 MBR2090CTKPbF MBR2090CTK-N3 MBR20100CTKPbF MBR20100CTK-N3  
Maximum DC  
reverse voltage  
VR  
80  
80  
90  
90  
100  
100  
V
Maximum  
working peak  
reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
TC = 133 °C, rated VR  
Rated VR, square wave, 20 kHz, TC = 133 °C  
VALUES  
UNITS  
per leg  
10  
20  
20  
Maximum average  
forward current  
IF(AV)  
IFRM  
per device  
Peak repetitive forward current per leg  
Following any rated load  
condition and with rated  
A
5 µs sine or 3 µs rect. pulse  
850  
150  
V
RRM applied  
Non-repetitive peak surge current  
IFSM  
Surge applied at rated load conditions half wave,  
single phase, 60 Hz  
Peak repetitive reverse surge current  
Non-repetitive avalanche energy per leg  
IRRM  
EAS  
2.0 µs, 1.0 kHz  
0.5  
24  
TJ = 25 °C, IAS = 2 A, L = 12 mH  
mJ  
Revision: 29-Aug-11  
Document Number: 94287  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567

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