Datasheet > VS-MBR2535CT-N3

VS-MBR2535CT-N3

更新时间： 2024-01-15 06:23:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	172K
描述
Schottky Rectifier

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中文翻译

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数据手册

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VS-MBR2535CT-N3 数据手册

VS-MBR25...CTPbF Series, VS-MBR25...CT-N3 Series

www.vishay.com

Vishay Semiconductors

Schottky Rectifier, 2 x 15 A

FEATURES

• 150 °C T_Joperation

Base

common

cathode

• Low forward voltage drop

• High frequency operation

• High purity, high temperature epoxy

encapsulation for enhanced mechanical

strength and moisture resistance

Anode

Common

cathode

TO-220AB

• Guard ring for enhanced ruggedness and long

term reliability

• Compliant to RoHS Directive 2002/95/EC

PRODUCT SUMMARY

• Designed and qualified according to JEDEC-JESD47

Package

TO-220AB

2 x 15 A

• Halogen-free according to IEC 61249-2-21 definition

(-N3 only)

I_F(AV)

V_R

35 V, 45 V

DESCRIPTION

V_Fat I_F

See Electrical table

40 mA at 125 °C

150 °C

This center tap Schottky rectifier has been optimized for low

reverse leakage at high temperature. The proprietary barrier

technology allows for reliable operation up to 150 °C

junction temperature. Typical applications are in switching

power supplies, converters, freewheeling diodes, and

reverse battery protection.

_RMmax.

T_Jmax.

Diode variation

E_AS

Common cathode

16 mJ

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FRM

I_FSM

CHARACTERISTICS

VALUES

UNITS

Rectangular waveform (per device)

35/45

T_C= 130 °C (per leg)

t_p= 5 μs sine

1060

V_F

30 A_pk, T_J= 125 °C

Range

0.73

T_J

- 65 to 150

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL VS-MBR2535CTPbF VS-MBR2535CT-N3 VS-MBR2545CTPbF VS-MBR2545CT-N3 UNITS

Maximum DC reverse

voltage

V_R

Maximumworkingpeak

reverse voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES UNITS

per leg

Maximum average

forward current

I_F(AV)

T_C= 130 °C, rated V_R

per device

Peak repetitive forward current per leg

I_FRM

Rated V_R, square wave, 20 kHz, T_C= 130 °C

Following any rated load

5 µs sine or 3 µs rect. pulse condition and with rated V_RRM

1060

applied

Non-repetitive peak surge current

I_FSM

Surge applied at rated load conditions halfwave,

single phase, 60 Hz

150

Non-repetitive avalanche energy per leg

Repetitive avalanche current per leg

E_AS

I_AR

T_J= 25 °C, I_AS= 2 A, L = 8 mH

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

Revision: 30-Aug-11

Document Number: 94291

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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与VS-MBR2535CT-N3相关器件

型号	品牌	获取价格	描述	数据表
VS-MBR2535CTPBF	VISHAY	获取价格	DIODE SCHOTTKY 35V 15A TO220AB
VS-MBR2535CTPBF_15	VISHAY	获取价格	Schottky Rectifier
VS-MBR2545CT-1-M3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-262AA,
VS-MBR2545CT-1PBF	VISHAY	获取价格	Schottky Rectifier
VS-MBR2545CT-N3	VISHAY	获取价格	Schottky Rectifier
VS-MBR2545CTPBF	VISHAY	获取价格	DIODE SCHOTTKY 45V 15A TO220AB
VS-MBR25CTPBF	VISHAY	获取价格	Low forward voltage drop
VS-MBR30..CT-M3	VISHAY	获取价格	High Performance Schottky Rectifiers, 2 x 15 A
VS-MBR3035CT-1-M3	VISHAY	获取价格	Low forward voltage drop
VS-MBR3035CT-1PbF	KERSEMI	获取价格	This center tap Schottky rectifier has been optimized for low

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