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VS-MBR3045CT-M3

更新时间： 2024-09-28 14:55:15
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 165K
描述
High Performance Schottky Rectifier, 2 x 15 A

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VS-MBR3045CT-M3  
Vishay Semiconductors  
www.vishay.com  
High Performance Schottky Rectifier, 2 x 15 A  
FEATURES  
Base  
common  
cathode  
2
• 150 °C TJ operation  
• Low forward voltage drop  
• High frequency operation  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
1
2
Anode  
Anode  
2
Common  
cathode  
1
3
3
• Guard ring for enhanced ruggedness and long term  
reliability  
TO-220AB 3L  
• Designed and qualified according to JEDEC®-JESD 47  
PRIMARY CHARACTERISTICS  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
IF(AV)  
2 x 15 A  
45 V  
VR  
DESCRIPTION  
VF at IF  
See Electrical table  
100 mA at 125 °C  
150 °C  
This center tap Schottky rectifier has been optimized for low  
reverse leakage at high temperature. The proprietary barrier  
technology allows for reliable operation up to 150 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
I
RM max.  
TJ max.  
EAS  
10 mJ  
Package  
TO-220AB 3L  
Circuit configuration  
Common cathode  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
CHARACTERISTICS  
VALUES  
30  
UNITS  
IF(AV)  
VRRM  
IFRM  
IFSM  
VF  
Rectangular waveform (per device)  
A
V
35/45  
30  
TC = 123 °C (per leg)  
tp = 5 μs sine  
A
1020  
20 Apk, TJ = 125 °C  
Range  
0.6  
V
TJ  
-65 to +150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
VS-MBR3045CT-M3  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
45  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
TC = 123 °C, rated VR  
VALUES  
UNITS  
per leg  
15  
30  
30  
Maximum average forward  
current  
IF(AV)  
IFRM  
per device  
Peak repetitive forward current per leg  
Rated VR, square wave, 20 kHz, TC = 123 °C  
Following any rated load  
5 µs sine or 3 µs rect. pulse condition and with rated  
RRM applied  
A
1020  
V
Non-repetitive peak surge current  
IFSM  
Surge applied at rated load conditions halfwave,  
single phase, 60 Hz  
200  
10  
2
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
TJ = 25 °C, IAS = 2 A, L = 5 mH  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
Revision: 28-Feb-2023  
Document Number: 96257  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567

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