VS-MBR20...CTHN3 Series
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 10 A
FEATURES
Base
common
cathode
2
• 150 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Anode
Anode
2
Common
cathode
1
3
TO-220AB
• Guard ring for enhanced ruggedness and long
term reliability
PRODUCT SUMMARY
• AEC-Q101 qualified meets JESD 201 class 2 whisker test
IF(AV)
2 x 10 A
35 V, 45 V
0.57 V
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
VR
VF at IF
DESCRIPTION
I
RM max.
15 mA at 125 °C
150 °C
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
TJ max.
EAS
8 mJ
Package
TO-220AB
Diode variation
Common cathode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFRM
CHARACTERISTICS
VALUES
20
UNITS
Rectangular waveform (per device)
A
V
35/45
20
TC = 135 °C (per leg)
tp = 5 μs sine
A
IFSM
1060
VF
10 Apk, TJ = 125 °C
Range
0.57
V
TJ
-65 to 150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VR
VS-MBR2035CTHN3
VS-MBR2045CTHN3
UNITS
Maximum DC reverse voltage
Maximum working peak reverse voltage
35
45
V
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
IF(AV)
IFRM
TEST CONDITIONS
TC = 135 °C, rated VR
VALUES UNITS
per leg
10
20
20
Maximum average
forward current
per device
Peak repetitive forward current per leg
Rated VR, square wave, 20 kHz, TC = 135 °C
Following any rated load
5 μs sine or 3 μs rect. pulse condition and with rated VRRM
applied
1060
A
Non-repetitive peak surge current
IFSM
Surge applied at rated load condition half wave,
150
2
single phase, 60 Hz
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
Repetitive avalanche current per leg
IAR
Non-repetitive avalanche energy per leg
EAS
TJ = 25 °C, IAS = 2 A, L = 4 mH
8
mJ
Revision: 05-Mar-14
Document Number: 94960
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000