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VS-MBR2080CT-1PBF PDF预览

VS-MBR2080CT-1PBF

更新时间: 2024-01-30 18:36:06
品牌 Logo 应用领域
威世 - VISHAY 高功率电源二极管
页数 文件大小 规格书
8页 268K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 80V V(RRM), Silicon, TO-262AA, PLASTIC, TO-262, 3 PIN

VS-MBR2080CT-1PBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-262AA
包装说明:PLASTIC, TO-262, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.76
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT应用:HIGH POWER
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.7 VJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:850 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:80 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

VS-MBR2080CT-1PBF 数据手册

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VS-MBRB20...CTPbF, VS-MBR20...CT-1PbF Series  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 2 x 10 A  
TO-263AB (D2PAK)  
FEATURES  
TO-262AA  
• 150 °C TJ operation  
• Low forward voltage drop  
• High frequency operation  
• Center tap D2PAK and TO-262 packages  
Base  
common  
cathode  
Base  
common  
cathode  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
2
2
• Guard ring for enhanced ruggedness and long term  
reliability  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
2
2
1
1
3
3
Common  
cathode  
Common  
cathode  
Anode  
Anode  
Anode  
Anode  
• AEC-Q101 qualified  
VS-MBR20 ...CT-1PbF  
VS-MBRB20...CTPbF  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRODUCT SUMMARY  
Package  
TO-263AB (D2PAK), TO-262AA  
2 x 10 A  
DESCRIPTION  
IF(AV)  
This center tap Schottky rectifier has been optimized for low  
reverse leakage at high temperature. The proprietary barrier  
technology allows for reliable operation up to 150 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
VR  
80 V, 90 V, 100 V  
0.70 V  
VF at IF  
IRM max.  
TJ max.  
Diode variation  
EAS  
15 mA at 125 °C  
150 °C  
Common cathode  
8.0 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
CHARACTERISTICS  
VALUES  
20  
UNITS  
IF(AV)  
IFRM  
VRRM  
IFSM  
VF  
Rectangular waveform (per device)  
TC = 133 °C (per leg)  
A
20  
80 to 100  
850  
V
A
tp = 5 μs sine  
10 Apk, TJ = 125 °C  
Range  
0.70  
V
TJ  
-65 to +150  
°C  
VOLTAGE RATINGS  
VS-MBRB2080CTPbF VS-MBRB2090CTPbF VS-MBRB20100CTPbF  
VS-MBR2080CT-1PbF VS-MBR2090CT-1PbF VS-MBR20100CT-1PbF  
PARAMETER  
SYMBOL  
UNITS  
Maximum DC reverse voltage  
VR  
80  
90  
100  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
IF(AV)  
IFRM  
TEST CONDITIONS  
VALUES  
UNITS  
per leg  
10  
20  
20  
Maximum average  
forward current  
TC = 133 °C, rated VR  
per device  
Peak repetitive forward current per leg  
Rated VR, square wave, 20 kHz, TC = 133 °C  
5 μs sine or  
Following any rated load condition  
and with rated VRRM applied  
A
850  
150  
3 μs rect. pulse  
Non-repetitive peak surge current  
IFSM  
Surge applied at rated load conditions half wave,   
single phase, 60 Hz  
Peak repetitive reverse surge current  
Non-repetitive avalanche energy per leg  
IRRM  
EAS  
2.0 μs, 1.0 kHz  
0.5  
24  
TJ = 25 °C, IAS = 2 A, L = 12 mH  
mJ  
Revision: 18-Oct-16  
Document Number: 94306  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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