VS-MBRB20...CTPbF, VS-MBR20...CT-1PbF Series
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Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 10 A
TO-263AB (D2PAK)
FEATURES
TO-262AA
• 150 °C TJ operation
• Low forward voltage drop
• High frequency operation
• Center tap D2PAK and TO-262 packages
Base
common
cathode
Base
common
cathode
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
2
2
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
2
2
1
1
3
3
Common
cathode
Common
cathode
Anode
Anode
Anode
Anode
• AEC-Q101 qualified
VS-MBR20 ...CT-1PbF
VS-MBRB20...CTPbF
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
TO-263AB (D2PAK), TO-262AA
2 x 10 A
DESCRIPTION
IF(AV)
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
VR
80 V, 90 V, 100 V
0.70 V
VF at IF
IRM max.
TJ max.
Diode variation
EAS
15 mA at 125 °C
150 °C
Common cathode
8.0 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
20
UNITS
IF(AV)
IFRM
VRRM
IFSM
VF
Rectangular waveform (per device)
TC = 133 °C (per leg)
A
20
80 to 100
850
V
A
tp = 5 μs sine
10 Apk, TJ = 125 °C
Range
0.70
V
TJ
-65 to +150
°C
VOLTAGE RATINGS
VS-MBRB2080CTPbF VS-MBRB2090CTPbF VS-MBRB20100CTPbF
VS-MBR2080CT-1PbF VS-MBR2090CT-1PbF VS-MBR20100CT-1PbF
PARAMETER
SYMBOL
UNITS
Maximum DC reverse voltage
VR
80
90
100
V
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
IF(AV)
IFRM
TEST CONDITIONS
VALUES
UNITS
per leg
10
20
20
Maximum average
forward current
TC = 133 °C, rated VR
per device
Peak repetitive forward current per leg
Rated VR, square wave, 20 kHz, TC = 133 °C
5 μs sine or
Following any rated load condition
and with rated VRRM applied
A
850
150
3 μs rect. pulse
Non-repetitive peak surge current
IFSM
Surge applied at rated load conditions half wave,
single phase, 60 Hz
Peak repetitive reverse surge current
Non-repetitive avalanche energy per leg
IRRM
EAS
2.0 μs, 1.0 kHz
0.5
24
TJ = 25 °C, IAS = 2 A, L = 12 mH
mJ
Revision: 18-Oct-16
Document Number: 94306
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000