Datasheet > VS-MBR2045CT-N3

VS-MBR2045CT-N3

更新时间： 2024-01-19 18:55:54

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	142K
描述
DIODE ARRAY SCHOTTKY 45V TO220AB

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中文翻译

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数据手册

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VS-MBR2045CT-N3 数据手册

VS-MBR20...CTHN3 Series

www.vishay.com

Vishay Semiconductors

High Performance Schottky Rectifier, 2 x 10 A

FEATURES

Base

common

cathode

• 150 °C T_Joperation

• Low forward voltage drop

• High frequency operation

• High purity, high temperature epoxy

encapsulation for enhanced mechanical

strength and moisture resistance

Anode

Common

cathode

TO-220AB

• Guard ring for enhanced ruggedness and long

term reliability

PRODUCT SUMMARY

• AEC-Q101 qualified meets JESD 201 class 2 whisker test

I_F(AV)

2 x 10 A

35 V, 45 V

0.57 V

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

V_R

V_Fat I_F

DESCRIPTION

_RMmax.

15 mA at 125 °C

150 °C

This center tap Schottky rectifier has been optimized for low

reverse leakage at high temperature. The proprietary barrier

technology allows for reliable operation up to 150 °C

junction temperature. Typical applications are in switching

power supplies, converters, freewheeling diodes, and

reverse battery protection.

T_Jmax.

E_AS

8 mJ

Package

TO-220AB

Diode variation

Common cathode

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FRM

CHARACTERISTICS

VALUES

UNITS

Rectangular waveform (per device)

35/45

T_C= 135 °C (per leg)

t_p= 5 μs sine

I_FSM

1060

V_F

10 A_pk, T_J= 125 °C

Range

0.57

T_J

-65 to 150

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

V_R

VS-MBR2035CTHN3

VS-MBR2045CTHN3

UNITS

Maximum DC reverse voltage

Maximum working peak reverse voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

I_F(AV)

I_FRM

TEST CONDITIONS

T_C= 135 °C, rated V_R

VALUES UNITS

per leg

Maximum average 

forward current

per device

Peak repetitive forward current per leg

Rated V_R, square wave, 20 kHz, T_C= 135 °C

Following any rated load

5 μs sine or 3 μs rect. pulse condition and with rated V_RRM

applied

1060

Non-repetitive peak surge current

I_FSM

Surge applied at rated load condition half wave, 

150

single phase, 60 Hz

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

Repetitive avalanche current per leg

I_AR

Non-repetitive avalanche energy per leg

E_AS

T_J= 25 °C, I_AS= 2 A, L = 4 mH

Revision: 05-Mar-14

Document Number: 94960

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与VS-MBR2045CT-N3相关器件

型号	品牌	获取价格	描述	数据表
VS-MBR2045CTPBF	VISHAY	获取价格	DIODE SCHOTTKY 45V 10A TO220AB
VS-MBR2080CT-1HM3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 80V V(RRM), Silicon, TO-262AA,
VS-MBR2080CT-1-M3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 80V V(RRM), Silicon, TO-262AA,
VS-MBR2080CT-1PBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 80V V(RRM), Silicon, TO-262AA, PLASTIC
VS-MBR2080CTG-1	VISHAY	获取价格	RECTIFIER DIODE
VS-MBR2080CTG-1P	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 80V V(RRM), Silicon, TO-262AA, HALOGEN
VS-MBR2080CTG-1PBF	VISHAY	获取价格	Rectifier Diode, Schottky, 10A, 80V V(RRM),
VS-MBR2080CTK-N3	VISHAY	获取价格	Low forward voltage drop
VS-MBR2080CTKPbF	VISHAY	获取价格	Low forward voltage drop
VS-MBR2080CT-N3	VISHAY	获取价格	Low forward voltage drop

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