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VS-MBR20100CT-M3

更新时间： 2024-11-13 14:53:55
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 156K
描述
High Performance Schottky Rectifier, 2 x 10 A

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VS-MBR20100CT-M3 数据手册

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VS-MBR2080CT-M3, VS-MBR2090CT-M3, VS-MBR20100CT-M3  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 2 x 10 A  
FEATURES  
Base  
common  
cathode  
2
• 150 °C TJ operation  
• Low forward voltage drop  
• High frequency operation  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
1
2
Anode  
Anode  
2
Common  
cathode  
1
3
3
TO-220AB 3L  
• Guard ring for enhanced ruggedness and long term  
reliability  
• Designed and qualified according to JEDEC®-JESD 47  
PRIMARY CHARACTERISTICS  
IF(AV)  
2 x 10 A  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
VR  
80 V, 90 V, 100 V  
0.70 V  
VF at IF  
RM max.  
DESCRIPTION  
I
6 mA at 125 °C  
150 °C  
This center tap Schottky rectifier has been optimized for low  
reverse leakage at high temperature. The proprietary barrier  
technology allows for reliable operation up to 150 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
TJ max.  
EAS  
24 mJ  
Package  
TO-220AB 3L  
Common cathode  
Circuit configuration  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
CHARACTERISTICS  
VALUES  
20  
UNITS  
IF(AV)  
IFRM  
VRRM  
IFSM  
VF  
Rectangular waveform (per device)  
TC = 133 °C per leg  
A
A
20  
80/100  
850  
V
tp = 5 μs sine  
10 Apk, TJ = 125 °C  
Range  
A
0.70  
V
TJ  
-65 to +150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
MBR2080CT-M3  
MBR2090CT-M3  
90  
MBR20100CT-M3  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
80  
100  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
IF(AV)  
IFRM  
TEST CONDITIONS  
TC = 133 °C, rated VR  
VALUES  
UNITS  
per leg  
10  
20  
20  
Maximum average  
forward current  
per device  
Peak repetitive forward current per leg  
Rated VR, square wave, 20 kHz, TC = 133 °C  
Following any rated load  
5 μs sine or 3 μs rect. pulse condition and with rated  
A
850  
150  
V
RRM applied  
Non-repetitive peak surge current  
IFSM  
Surge applied at rated load conditions halfwave,  
single phase, 60 Hz  
Peak repetitive reverse surge current  
Non-repetitive avalanche energy per leg  
IRRM  
EAS  
2.0 μs, 1.0 kHz  
0.5  
24  
TJ = 25 °C, IAS = 2 A, L = 12 mH  
mJ  
Revision: 28-Feb-2023  
Document Number: 96282  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567

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