Datasheet > VS-MBR1645-N3

VS-MBR1645-N3

更新时间： 2024-11-26 01:05:27

品牌	Logo	应用领域
威世 - VISHAY		/
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描述
Low forward voltage drop

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数据手册

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VS-MBR1645-N3 数据手册

VS-MBR16...PbF Series, VS-MBR16...-N3 Series

www.vishay.com

Vishay Semiconductors

Schottky Rectifier, 16 A

FEATURES

Base

• 150 °C T_Joperation

cathode

• Low forward voltage drop

• High frequency operation

• High

purity,

high

temperature

epoxy

encapsulation for enhanced mechanical

strength and moisture resistance

Cathode Anode

TO-220AC

• Guard ring for enhanced ruggedness and long

term reliability

• Compliant to RoHS Directive 2002/95/EC

PRODUCT SUMMARY

• Designed and qualified according to JEDEC-JESD47

Package

TO-220AC

16 A

• Halogen-free according to IEC 61249-2-21 definition

(-N3 only)

I_F(AV)

V_R

35 V, 45 V

0.57 V

V_Fat I_F

DESCRIPTION

_RMmax.

40 mA at 125 °C

150 °C

The VS-MBR16... Schottky rectifier has been optimized for

low reverse leakage at high temperature. The proprietary

barrier technology allows for reliable operation up to 150 °C

junction temperature. Typical applications are in switching

power supplies, converters, freewheeling diodes, and

reverse battery protection.

T_Jmax.

Diode variation

E_AS

Single die

24 mJ

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

UNITS

Rectangular waveform

35/45

t_p= 5 μs sine

16 A_pk, T_J= 125 °C

Range

1800

V_F

0.57

T_J

- 65 to 150

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

VS-MBR1635PbF

VS-MBR1635-N3

VS-MBR1645PbF

VS-MBR1645-N3

UNITS

Maximum DC reverse

voltage

V_R

Maximum working peak

reverse voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

T_C= 134 °C, rated V_R

VALUES

UNITS

Maximum average forward current

I_F(AV)

Following any rated load

condition and with rated

5 µs sine or 3 µs rect. pulse

1800

V_RRMapplied

Non-repetitive peak surge current

I_FSM

Surge applied at rated load condition half wave

single phase, 60 Hz

150

Non-repetitive avalanche energy

Repetitive avalanche current

E_AS

I_AR

T_J= 25 °C, I_AS= 3.6 A, L = 3.7 mH

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

3.6

Revision: 29-Aug-11

Document Number: 94286

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与VS-MBR1645-N3相关器件

型号	品牌	获取价格	描述	数据表
VS-MBR1645PBF	VISHAY	获取价格	DIODE SCHOTTKY 45V 16A TO220AC
VS-MBR16PBF	VISHAY	获取价格	Low forward voltage drop
VS-MBR20	VISHAY	获取价格	Low forward voltage drop
VS-MBR20...CT-1-M3	VISHAY	获取价格	High Performance Schottky Rectifier, 2 x 10 A
VS-MBR20..CT-1-M3	VISHAY	获取价格	High Performance Schottky Rectifier, 2 x 10 A
VS-MBR20100CT-1HM3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, TO-262AA,
VS-MBR20100CT-1-M3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, TO-262AA,
VS-MBR20100CT-1P	VISHAY	获取价格	RECTIFIER DIODE
VS-MBR20100CT-1PBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, TO-262AA, PLASTI
VS-MBR20100CTG-1	VISHAY	获取价格	RECTIFIER DIODE

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