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VS-MBR1635-M3

更新时间： 2024-11-28 14:54:31
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 124K
描述
High Performance Schottky Rectifier, 16 A

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VS-MBR1635-M3 数据手册

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VS-MBR1635-M3, VS-MBR1645-M3  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 16 A  
FEATURES  
Base  
cathode  
2
• 150 °C TJ operation  
• Low forward voltage drop  
• High frequency operation  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
1
3
Cathode  
Anode  
TO-220AC 2L  
• Guard ring for enhanced ruggedness and long term  
reliability  
• Designed and qualified according to JEDEC®-JESD 47  
PRIMARY CHARACTERISTICS  
IF(AV)  
16 A  
35 V, 45 V  
0.57 V  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
VR  
VF at IF  
DESCRIPTION  
I
RM max.  
40 mA at 125 °C  
150 °C  
The VS-MBR16... Schottky rectifier has been optimized for  
low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 150 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
TJ max.  
EAS  
24 mJ  
TO-220AC 2L  
Single  
Package  
Circuit configuration  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
CHARACTERISTICS  
VALUES  
16  
UNITS  
IF(AV)  
VRRM  
IFSM  
VF  
Rectangular waveform  
A
V
35, 45  
1800  
tp = 5 μs sine  
A
16 Apk, TJ = 125 °C  
0.57  
V
TJ  
Range  
-65 to +150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
VS-MBR1635-M3  
VS-MBR1645-M3  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
35  
45  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
TC = 134 °C, rated VR  
VALUES  
UNITS  
Maximum average forward current  
IF(AV)  
16  
A
Following any rated load  
5 µs sine or 3 µs rect. pulse condition and with rated  
RRM applied  
1800  
V
Non-repetitive peak surge current  
IFSM  
A
Surge applied at rated load condition half wave  
single phase, 60 Hz  
150  
24  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 3.6 A, L = 3.7 mH  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
3.6  
Revision: 28-Feb-2023  
Document Number: 96267  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
123456

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