Datasheet > VS-HFA04TB60STRRP

VS-HFA04TB60STRRP

更新时间： 2024-11-07 01:21:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	161K
描述
Ultrasoft recovery

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VS-HFA04TB60STRRP 数据手册

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VS-HFA04TB60SPbF

Vishay Semiconductors

www.vishay.com

HEXFRED^®,

Ultrafast Soft Recovery Diode, 4 A

FEATURES

• Ultrafast recovery

• Ultrasoft recovery

• Very low I_RRM

• Very low Q_rr

• Specified at operating temperature

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

• AEC-Q101 qualified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TO-263AB (D²PAK)

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

N/C

Anode

• Reduced parts count

DESCRIPTION

PRODUCT SUMMARY

TO-263AB (D²PAK)

VS-HFA04TB60S is a state of the art ultrafast recovery

diode. Employing the latest in epitaxial construction and

advanced processing techniques it features a superb

combination of characteristics which result in performance

which is unsurpassed by any rectifier previously available.

With basic ratings of 600 V and 4 A continuous current, the

VS-HFA04TB60S is especially well suited for use as the

companion diode for IGBTs and MOSFETs. In addition to

ultrafast recovery time, the HEXFRED^®product line features

extremely low values of peak recovery current (I_RRM) and

does not exhibit any tendency to “snap-off” during the

t_bportion of recovery. The HEXFRED features combine to

offer designers a rectifier with lower noise and significantly

lower switching losses in both the diode and the switching

transistor. These HEXFRED advantages can help to

significantly reduce snubbing, component count and

heatsink sizes. The HEXFRED VS-HFA04TB60S is ideally

suited for applications in power supplies and power

conversion systems (such as inverters), motor drives, and

many other similar applications where high speed, high

efficiency is needed.

Package

I_F(AV)

4 A

600 V

V_R

V_Fat I_F

1.4 V

t_rr(typ.)

T_Jmax.

Diode variation

17 ns

150 °C

Single die

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_R

TEST CONDITIONS

VALUES

UNITS

Cathode to anode voltage

600

Maximum continuous forward current

Single pulse forward current

I_F

T_C= 100 °C

I_FSM

I_FRM

Maximum repetitive forward current

T_C= 25 °C

Maximum power dissipation

P_D

T_C= 100 °C

Operating junction and storage temperature range

T_J, T_Stg

-55 to +150

°C

Revision: 29-Feb-16

Document Number: 94036

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEuropa@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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VS-HFA04TB60STRRP 替代型号

型号	品牌	替代类型	描述	数据表
VS-HFA04TB60SPBF	VISHAY	完全替代	Ultrasoft recovery

与VS-HFA04TB60STRRP相关器件

型号	品牌	获取价格	描述	数据表
VS-HFA06PB120-N3	VISHAY	获取价格	DIODE RECTIFIER DIODE, Rectifier Diode
VS-HFA06TB120-M3	VISHAY	获取价格	HEXFRED?, Ultrafast Soft Recovery Diode, 6 A
VS-HFA06TB120PBF	INFINEON	获取价格	Ultrafast, Soft Recovery Diode
VS-HFA06TB120S-M3	VISHAY	获取价格	HEXFRED? Ultrafast Soft Recovery Diode, 6 A
VS-HFA06TB120SPBF	VISHAY	获取价格	Specified at operating conditions
VS-HFA06TB120STRLP	VISHAY	获取价格	Specified at operating conditions
VS-HFA06TB120STRLPBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 6A, Silicon, HALOGEN FREE AND ROHS COMPLIANT, D2PAK-3
VS-HFA06TB120STRRP	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 6A, 1200V V(RRM), Silicon, TO-263AB, HALOGEN FREE AND
VS-HFA06TB120STRRPBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 6A, Silicon, HALOGEN FREE AND ROHS COMPLIANT, D2PAK-3
VS-HFA08PB120-N3	VISHAY	获取价格	DIODE RECTIFIER DIODE, Rectifier Diode

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