Datasheet > VS-HFA06TB120S-M3

VS-HFA06TB120S-M3

更新时间： 2024-11-07 14:54:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	169K
描述
HEXFRED? Ultrafast Soft Recovery Diode, 6 A

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VS-HFA06TB120S-M3

www.vishay.com

Vishay Semiconductors

HEXFRED^®

Ultrafast Soft Recovery Diode, 6 A

FEATURES

• Ultrafast and ultrasoft recovery

• Very low I_RRMand Q_rr

• Specified at operating conditions

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

D²PAK (TO-263AB)

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

N/C

• Reduced parts count

Anode

DESCRIPTION

VS-HFA06TB120S is a state of the art ultrafast recovery

diode. Employing the latest in epitaxial construction and

advanced processing techniques it features a superb

combination of characteristics which result in performance

which is unsurpassed by any rectifier previously available.

With basic ratings of 1200 V and 6 A continuous current, the

VS-HFA06TB120S is especially well suited for use as the

companion diode for IGBTs and MOSFETs. In addition to

ultrafast recovery time, the HEXFRED^®product line features

extremely low values of peak recovery current (I_RRM) and

does not exhibit any tendency to “snap-off” during the

t_bportion of recovery. The HEXFRED features combine to

offer designers a rectifier with lower noise and significantly

lower switching losses in both the diode and the switching

transistor. These HEXFRED advantages can help to

significantly reduce snubbing, component count and

heatsink sizes. The HEXFRED VS-HFA06TB120S is ideally

suited for applications in power supplies and power

conversion systems (such as inverters), motor drives, and

many other similar applications where high speed, high

efficiency is needed.

PRIMARY CHARACTERISTICS

I_F(AV)

6 A

V_R

1200 V

2.4 V

V_Fat I_F

t_rr(typ.)

T_Jmax.

26 ns

150 °C

Package

D²PAK (TO-263AB)

Single

Circuit configuration

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_R

TEST CONDITIONS

VALUES

UNITS

Cathode to anode voltage

1200

Maximum continuous forward current

Single pulse forward current

I_F

T_C= 100 °C

I_FSM

I_FRM

Maximum repetitive forward current

T_C= 25 °C

62.5

Maximum power dissipation

P_D

_C= 100 °C

Operating junction and storage temperature range

T_J, T_Stg

-55 to +150

°C

Revision: 16-Dec-2021

Document Number: 96216

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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与VS-HFA06TB120S-M3相关器件

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VS-HFA06TB120SPBF	VISHAY	获取价格	Specified at operating conditions
VS-HFA06TB120STRLP	VISHAY	获取价格	Specified at operating conditions
VS-HFA06TB120STRLPBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 6A, Silicon, HALOGEN FREE AND ROHS COMPLIANT, D2PAK-3
VS-HFA06TB120STRRP	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 6A, 1200V V(RRM), Silicon, TO-263AB, HALOGEN FREE AND
VS-HFA06TB120STRRPBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 6A, Silicon, HALOGEN FREE AND ROHS COMPLIANT, D2PAK-3
VS-HFA08PB120-N3	VISHAY	获取价格	DIODE RECTIFIER DIODE, Rectifier Diode
VS-HFA08PB120PBF	VISHAY	获取价格	DIODE 8 A, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, PLASTIC, MODIFIED TO-247AC, 2 PIN, Re
VS-HFA08PB60-N3	VISHAY	获取价格	DIODE RECTIFIER DIODE, Rectifier Diode
VS-HFA08PB60PBF	VISHAY	获取价格	DIODE 8 A, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, PLASTIC, MODIFIED TO-247AC, 2 PIN, Re
VS-HFA08SD60SL-M3	VISHAY	获取价格	DIODE 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPA

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