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VS-HFA08TA60CS-M3

更新时间： 2024-09-25 14:52:59
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 193K
描述
HEXFRED? Ultrafast Soft Recovery Diode, 2 x 4 A

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VS-HFA08TA60CS-M3  
www.vishay.com  
Vishay Semiconductors  
HEXFRED®  
Ultrafast Soft Recovery Diode, 2 x 4 A  
FEATURES  
• Ultrafast and ultrasoft recovery  
• Very low IRRM and Qrr  
• Specified at operating conditions  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C  
2
1
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
3
D2PAK (TO-263AB)  
BENEFITS  
Base  
common  
cathode  
2
• Reduced RFI and EMI  
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
• Reduced parts count  
2
1
3
DESCRIPTION  
Common  
cathode  
Anode  
Anode  
VS-HFA08TA60CS is a state of the art center tap ultrafast  
recovery diode. Employing the latest in epitaxial  
construction and advanced processing techniques it  
features a superb combination of characteristics which  
result in performance which is unsurpassed by any rectifier  
previously available. With basic ratings of 600 V and 4 A per  
leg continuous current, the VS-HFA08TA60CS is especially  
well suited for use as the companion diode for IGBTs and  
MOSFETs. In addition to ultrafast recovery time, the  
HEXFRED® product line features extremely low values of  
peak recovery current (IRRM) and does not exhibit any  
tendency to “snap-off” during the tb portion of recovery. The  
HEXFRED features combine to offer designers a rectifier  
with lower noise and significantly lower switching losses in  
both the diode and the switching transistor. These  
HEXFRED advantages can help to significantly reduce  
snubbing, component count and heatsink sizes. The  
HEXFRED VS-HFA08TA60CS is ideally suited for  
applications in power supplies and power conversion  
systems (such as inverters), motor drives, and many other  
similar applications where high speed, high efficiency is  
needed.  
PRIMARY CHARACTERISTICS  
IF(AV)  
8 A  
VR  
600 V  
2.2 V  
VF at IF  
trr (typ.)  
TJ max.  
17 ns  
150 °C  
Package  
D2PAK (TO-263AB)  
Common cathode  
Circuit configuration  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
VR  
600  
V
per leg  
per device  
4
Maximum continuous forward current  
IF  
TC = 100 °C  
8
A
Single pulse forward current  
IFSM  
IFRM  
25  
Maximum repetitive forward current  
16  
25  
TC = 25 °C  
Maximum power dissipation  
PD  
W
TC = 100 °C  
10  
Operating junction and storage temperature range  
TJ, TStg  
-55 to +150  
°C  
Revision: 16-Dec-2021  
Document Number: 96217  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345678

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