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VS-8EWS16STRL-M3 PDF预览

VS-8EWS16STRL-M3

更新时间： 2024-02-07 01:58:50
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威世 - VISHAY /
页数 文件大小 规格书
7页 168K
描述
High Voltage Surface Mount Input Rectifier Diode, 8 A

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VS-8EWS16STRL-M3 数据手册

 浏览型号VS-8EWS16STRL-M3的Datasheet PDF文件第2页浏览型号VS-8EWS16STRL-M3的Datasheet PDF文件第3页浏览型号VS-8EWS16STRL-M3的Datasheet PDF文件第4页浏览型号VS-8EWS16STRL-M3的Datasheet PDF文件第5页浏览型号VS-8EWS16STRL-M3的Datasheet PDF文件第6页浏览型号VS-8EWS16STRL-M3的Datasheet PDF文件第7页 
VS-8EWS16S-M3 Series  
www.vishay.com  
Vishay Semiconductors  
High Voltage Surface Mount Input Rectifier Diode, 8 A  
FEATURES  
Base  
• Glass passivated pellet chip junction  
cathode  
+
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
2
• Material categorization:  
2
for definitions of compliance please see  
3
www.vishay.com/doc?99912  
1
1
3
TO-252AA (D-PAK)  
-
-
Anode  
Anode  
APPLICATIONS  
• Input rectification  
• Vishay Semiconductors switches and output rectifiers  
which are available in identical package outlines  
PRODUCT SUMMARY  
Package  
TO-252AA (D-PAK)  
8 A  
DESCRIPTION  
IF(AV)  
The VS-8EWS16S-M3 rectifier high voltage series has been  
optimized for very low forward voltage drop, with moderate  
leakage. The glass passivation technology used has reliable  
operation up to 150 °C junction temperature.  
VR  
1600 V  
VF at IF  
IFSM  
1.1 V  
150 A  
TJ max.  
Diode variation  
150 °C  
The high reverse voltage range available allows design of  
input stage primary rectification with outstanding voltage  
surge capability.  
Single die  
OUTPUT CURRENT IN TYPICAL APPLICATIONS  
APPLICATIONS  
SINGLE-PHASE BRIDGE  
THREE-PHASE BRIDGE  
UNITS  
NEMA FR-4 or G10 glass fabric-based epoxy  
with 4 oz. (140 μm) copper  
1.2  
1.6  
A
Aluminum IMS, RthCA = 15 °C/W  
2.5  
5.5  
2.8  
6.5  
Aluminum IMS with heatsink, RthCA = 5 °C/W  
Note  
•
TA = 55 °C, TJ = 125 °C, footprint 300 mm2  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
8
UNITS  
Sinusoidal waveform  
A
V
1600  
150  
A
VF  
8 A, TJ = 25 °C  
1.10  
V
TJ  
-40 to +150  
°C  
VOLTAGE RATINGS  
PART NUMBER  
VRRM, MAXIMUM  
PEAK REVERSE VOLTAGE  
V
V
RSM, MAXIMUM NON-REPETITIVE  
IRRM  
AT 150 °C  
mA  
PEAK REVERSE VOLTAGE  
V
VS-8EWS16S-M3  
1600  
1700  
0.5  
Revision: 17-Jan-17  
Document Number: 93384  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567

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VS-8EWS16STRL-M3 替代型号

型号 品牌 替代类型 描述 数据表
VS-8EWS16STR-M3 VISHAY

完全替代

 High Voltage Surface Mount Input Rectifier Diode, 8 A
VS-8EWS16STRR-M3 VISHAY

完全替代

 DIODE 8 A, 1600 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PL
VS-8EWS16S-M3 VISHAY

完全替代

 DIODE 8 A, 1600 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PL

与VS-8EWS16STRL-M3相关器件

型号 品牌 获取价格 描述 数据表
VS-8EWS16STRLPBF VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 8A, 1600V V(RRM), Silicon, TO-252AA, ROHS COMPLIANT,
VS-8EWS16STR-M3 VISHAY

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 		High Voltage Surface Mount Input Rectifier Diode, 8 A
VS-8EWS16STRPBF VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 8A, 1600V V(RRM), Silicon, TO-252AA, ROHS COMPLIANT,
VS-8EWS16STRR-M3 VISHAY

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 		DIODE 8 A, 1600 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PL
VS-8EWS16STRRPBF VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 8A, 1600V V(RRM), Silicon, TO-252AA, ROHS COMPLIANT,
VS-8EWX06FN-M3 VISHAY

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 		DIODE 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLA
VS-8EWX06FNTRL-M3 VISHAY

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 		Hyperfast Rectifier, 8 A FRED Pt®
VS-8EWX06FNTR-M3 VISHAY

获取价格

 		DIODE 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLA
VS-8EWX06FNTRR-M3 VISHAY

获取价格

 		Hyperfast Rectifier, 8 A FRED Pt®
VS8-L2-B1-H334-00 ASTEC

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 		1000 - 2500 Watts

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