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VS-8EWS12STRRPBF PDF预览

VS-8EWS12STRRPBF

更新时间: 2024-11-24 15:57:43
品牌 Logo 应用领域
威世 - VISHAY 高压二极管
页数 文件大小 规格书
7页 152K
描述
Rectifier Diode, 1 Phase, 1 Element, 8A, 1200V V(RRM), Silicon, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2

VS-8EWS12STRRPBF 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete包装说明:R-PSSO-G2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.84
Is Samacsys:N应用:HIGH VOLTAGE
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 VJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:150 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大重复峰值反向电压:1200 V最大反向电流:50 µA
子类别:Rectifier Diodes表面贴装:YES
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:10
Base Number Matches:1

VS-8EWS12STRRPBF 数据手册

 浏览型号VS-8EWS12STRRPBF的Datasheet PDF文件第2页浏览型号VS-8EWS12STRRPBF的Datasheet PDF文件第3页浏览型号VS-8EWS12STRRPBF的Datasheet PDF文件第4页浏览型号VS-8EWS12STRRPBF的Datasheet PDF文件第5页浏览型号VS-8EWS12STRRPBF的Datasheet PDF文件第6页浏览型号VS-8EWS12STRRPBF的Datasheet PDF文件第7页 
VS-8EWS..SPbF Series  
www.vishay.com  
Vishay Semiconductors  
High Voltage Surface Mount Input Rectifier Diode, 8 A  
FEATURES  
Base  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
cathode  
+
2
• Material categorization:  
For definitions of compliance please see  
www.vishay.com/doc?99912  
2
3
1
APPLICATIONS  
1
3
D-PAK  
-
-
Anode  
Anode  
• Input rectification  
• Vishay Semiconductors switches and output rectifiers  
which are available in identical package outlines  
PRODUCT SUMMARY  
Package  
D-PAK (TO-252AA)  
8 A  
DESCRIPTION  
IF(AV)  
The 8EWS..SPbF rectifier high voltage series has been  
optimized for very low forward voltage drop, with moderate  
leakage. The glass passivation technology used has reliable  
operation up to 150 °C junction temperature.  
VR  
800 V, 1200 V  
1.1 V  
VF at IF  
IFSM  
150 A  
The high reverse voltage range available allows design of  
input stage primary rectification with outstanding voltage  
surge capability.  
TJ max.  
Diode variation  
150 °C  
Single die  
OUTPUT CURRENT IN TYPICAL APPLICATIONS  
APPLICATIONS  
SINGLE-PHASE BRIDGE  
THREE-PHASE BRIDGE  
UNITS  
NEMA FR-4 or G10 glass fabric-based  
epoxy with 4 oz. (140 μm) copper  
1.2  
2.5  
5.5  
1.6  
2.8  
6.5  
Aluminum IMS, RthCA = 15 °C/W  
A
Aluminum IMS with heatsink,  
RthCA = 5 °C/W  
Note  
TA = 55 °C, TJ = 125 °C, footprint 300 mm2  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
8
UNITS  
Sinusoidal waveform at TC = 116 °C  
A
V
800/1200  
150  
A
VF  
8 A, TJ = 25 °C  
1.10  
V
TJ  
-55 to 150  
°C  
VOLTAGE RATINGS  
VRRM, MAXIMUM  
PEAK REVERSE VOLTAGE  
V
VRSM, MAXIMUM NON-REPETITIVE  
IRRM  
AT 150 °C  
mA  
PART NUMBER  
PEAK REVERSE VOLTAGE  
V
8EWS08SPbF  
8EWS12SPbF  
800  
900  
0.5  
1200  
1300  
Revision: 18-Dec-13  
Document Number: 94349  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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