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VS-8CWH02FNTR-M3

更新时间： 2024-11-05 22:56:47
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 154K
描述
DIODE STANDARD 200V 4A DPAK

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VS-8CWH02FNTR-M3 数据手册

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VS-8CWH02FN-M3  
Vishay Semiconductors  
www.vishay.com  
Hyperfast Rectifier, 2 x 4 AFRED Pt®  
FEATURES  
Base  
common  
cathode  
2
• Hyperfast recovery time  
• 175 °C max. operating junction temperature  
• Output rectification freewheeling  
• Low forward voltage drop reduced Qrr and  
soft recovery  
2
1
3
• Low leakage current  
Common  
cathode  
DPAK (TO-252AA)  
Anode  
Anode  
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
DESCRIPTION / APPLICATIONS  
IF(AV)  
2 x 4 A  
200 V  
0.71 V  
23 ns  
State of the art hyperfast recovery rectifiers designed with  
optimized performance of forward voltage drop, hyperfast  
recovery time, and soft recovery.  
The planar structure and the platinum doped life time  
control guarantee the best overall performance, ruggedness  
and reliability characteristics.  
VR  
VF at IF  
trr (typ.)  
TJ max.  
175 °C  
Package  
DPAK (TO-252AA)  
Common cathode  
These devices are intended for use in PFC boost stage in the  
AC/DC section of SMPS inverters or as freewheeling diodes.  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce  
over dissipation in the switching element and snubbers.  
Circuit configuration  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
TEST CONDITIONS  
VALUES  
UNITS  
Peak repetitive reverse voltage  
200  
V
Average rectified forward current  
Non-repetitive peak surge current per leg  
Operating junction and storage temperatures  
IF(AV)  
TC = 164 °C  
TJ = 25 °C  
8
80  
A
IFSM  
TJ, TStg  
-65 to +175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
200  
-
-
IF = 4 A  
IF = 8 A  
-
-
-
-
-
-
-
-
-
0.87  
0.95  
0.71  
0.8  
-
0.95  
1.10  
0.80  
1.0  
4
V
Forward voltage per leg  
VF  
IF = 4 A, TJ = 150 °C  
IF = 8 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current per leg  
IR  
TJ = 125 °C, VR = VR rated  
TJ = 150 °C, VR = VR rated  
VR = 200 V  
-
40  
80  
-
μA  
-
Junction capacitance per leg  
Series inductance  
CT  
LS  
17  
8
pF  
nH  
Measured lead to lead 5 mm from package body  
-
Revision: 11-Apr-18  
Document Number: 93261  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567

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VS-8CWH02FNTR-M3 替代型号

型号 品牌 替代类型 描述 数据表
VS-8CWH02FN-M3 VISHAY

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功能相似

 DIODE 4 A, 200 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLA

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