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VS-8CWH02FN-M3

更新时间： 2024-11-05 11:58:43
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 149K
描述
Hyperfast Rectifier, 2 x 4 A FRED Pt®

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中文翻译

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VS-8CWH02FN-M3 技术参数

生命周期：Active零件包装代码：TO-252AA
包装说明：R-PSSO-G2针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：0.92
其他特性：FREE WHEELING DIODE, LOW LEAKAGE CURRENT应用：HYPERFAST SOFT RECOVERY HIGH POWER
外壳连接：CATHODE配置：COMMON CATHODE, 2 ELEMENTS
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.8 VJEDEC-95代码：TO-252AA
JESD-30 代码：R-PSSO-G2最大非重复峰值正向电流：80 A
元件数量：2相数：1
端子数量：2最高工作温度：175 °C
最低工作温度：-65 °C最大输出电流：4 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified最大重复峰值反向电压：200 V
最大反向恢复时间：0.027 µs子类别：Rectifier Diodes
表面贴装：YES端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

VS-8CWH02FN-M3 数据手册

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VS-8CWH02FN-M3  
Vishay Semiconductors  
Hyperfast Rectifier, 2 x 4 A FRED Pt®  
FEATURES  
• Hyperfast recovery time  
Base  
common  
cathode  
2
• 175 °C max. operating junction temperature  
• Output rectification freewheeling  
• Low forward voltage drop reduced Qrr and soft  
recovery  
2
1
3
• Low leakage current  
Common  
cathode  
D-PAK (TO-252AA)  
Anode  
Anode  
• Compliant to RoHS Directive 2002/95/EC  
• Halogen-free according to IEC 61249-2-21 definition  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
PRODUCT SUMMARY  
DESCRIPTION/APPLICATIONS  
Package  
D-PAK (TO-252AA)  
2 x 4 A  
State of the art hyperfast recovery rectifiers designed with  
optimized performance of forward voltage drop, hyperfast  
recovery time, and soft recovery.  
IF(AV)  
VR  
200 V  
The planar structure and the platinum doped life time  
control guarantee the best overall performance, ruggedness  
and reliability characteristics.  
These devices are intended for use in PFC boost stage in the  
AC/DC section of SMPS inverters or as freewheeling diodes.  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce  
over dissipation in the switching element and snubbers.  
VF at IF  
0.95 V  
trr (typ.)  
TJ max.  
Diode variation  
23 ns  
175 °C  
Common cathode  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
TEST CONDITIONS  
VALUES  
UNITS  
Peak repetitive reverse voltage  
200  
V
Average rectified forward current  
Non-repetitive peak surge current per leg  
Operating junction and storage temperatures  
IF(AV)  
TC = 164 °C  
TJ = 25 °C  
8
80  
A
IFSM  
TJ, TStg  
- 65 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
200  
-
-
IF = 4 A  
IF = 8 A  
-
-
-
-
-
-
-
-
-
0.87  
0.95  
0.71  
0.8  
-
0.95  
1.10  
0.80  
1.0  
4
V
Forward voltage per leg  
VF  
IF = 4 A, TJ = 150 °C  
IF = 8 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current per leg  
IR  
TJ = 125 °C, VR = VR rated  
TJ = 150 °C, VR = VR rated  
VR = 200 V  
-
40  
80  
-
μA  
-
Junction capacitance per leg  
Series inductance  
CT  
LS  
17  
8
pF  
nH  
Measured lead to lead 5 mm from package body  
-
Document Number: 93261  
Revision: 31-Mar-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345678

中文翻译

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VS-8CWH02FN-M3 替代型号

型号 品牌 替代类型 描述 数据表
VS-8CWH02FNTR-M3 VISHAY

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 DIODE STANDARD 200V 4A DPAK
VS-8CWH02FNTRL-M3 VISHAY

功能相似

 DIODE 4 A, 200 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLA
VS-8CWH02FNTRR-M3 VISHAY

功能相似

 DIODE 4 A, 200 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLA

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