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VS-8DKH02-M3

更新时间： 2024-11-06 14:54:11
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 223K
描述
Hyperfast Rectifier, 2 x 4 A FRED Pt?

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VS-8DKH02-M3  
Vishay Semiconductors  
www.vishay.com  
Hyperfast Rectifier, 2 x 4 A FRED Pt®  
FEATURES  
1
2
• Hyperfast recovery time, reduced Qrr, and soft  
recovery  
3
4
• 175 °C maximum operating junction temperature  
• Specific for output and snubber operation  
• Low forward voltage drop  
8
7
6
5
• Low leakage current  
• Meets MSL level 1 per J-STD-020, LF maximum peak  
of 260 °C  
FlatPAK 5 x 6  
1, 2  
3, 4  
7, 8  
5, 6  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
DESCRIPTION / APPLICATIONS  
State of the art hyperfast recovery rectifiers specifically  
designed with optimized performance of forward voltage  
drop and hyperfast recovery time.  
LINKS TO ADDITIONAL RESOURCES  
3
D
3
D
3D Models  
The planar structure and the platinum doped life time control  
guarantee the best overall performance, ruggedness, and  
reliability characteristics.  
PRIMARY CHARACTERISTICS  
These devices are intended for use in snubber, boost,  
piezo-injection, as high frequency rectifiers, and  
freewheeling diodes.  
IF(AV)  
2 x 4 A  
200 V  
0.7 V  
VR  
VF at IF  
trr (typ.)  
TJ max.  
The extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce power  
dissipation in the switching element.  
25 ns  
175 °C  
Package  
FlatPAK 5 x 6  
Separated cathode  
MECHANICAL DATA  
Circuit configuration  
Case: FlatPAK 5 x 6  
Molding compound meets UL 94 V-0 flammability rating  
Halogen-free, RoHS-compliant  
Terminals: matte tin plated leads, solderable per  
J-STD-002, meets JESD 201 class 2 whisker test  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
TEST CONDITIONS  
VALUES  
UNITS  
Peak repetitive reverse voltage  
200  
V
TSolderpad = 170 °C, DC  
Solderpad = 169 °C, D = 0.5  
Average rectified forward current per device  
IF(AV)  
8
T
A
per device  
Non-repetitive peak surge current  
per diode  
173  
87  
IFSM  
TJ = 25 °C, 10 ms sinusoidal pulse  
Operating junction and storage temperatures  
TJ, TStg  
-55 to +175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
-
MAX. UNITS  
Breakdown voltage, blocking voltage  
VBR, VR  
IR = 100 μA  
200  
-
IF = 4 A  
-
-
-
-
-
0.87  
0.7  
-
0.96  
0.78  
2
V
Forward voltage, per diode  
VF  
IF = 4 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current, per diode  
Junction capacitance  
IR  
μA  
pF  
TJ = 150 °C, VR = VR rated  
VR = 200 V  
7
80  
-
CT  
19  
Revision: 29-Jan-2021  
Document Number: 96090  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345678

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