Datasheet > VS-8DKH02HM3

VS-8DKH02HM3

更新时间： 2024-11-06 14:54:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	226K
描述
Hyperfast Rectifier, 2 x 4 A FRED Pt?

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VS-8DKH02HM3 数据手册

VS-8DKH02HM3

Vishay Semiconductors

www.vishay.com

Hyperfast Rectifier, 2 x 4 A FRED Pt^®

FEATURES

• Hyperfast recovery time, reduced Q_rr, and

soft recovery

• 175 °C maximum operating junction

temperature

• Specific for output and snubber operation

• Low forward voltage drop

• Low leakage current

FlatPAK 5 x 6

• AEC-Q101 qualified

1, 2

7, 8

5, 6

• Meets MSL level 1 per J-STD-020, LF maximum peak

of 260 °C

3, 4

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

LINKS TO ADDITIONAL RESOURCES

DESCRIPTION / APPLICATIONS

State of the art hyperfast recovery rectifiers specifically

designed with optimized performance of forward voltage

drop and hyperfast recovery time.

3D Models

The planar structure and the platinum doped life time control

guarantee the best overall performance, ruggedness, and

reliability characteristics.

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 4 A

200 V

0.7 V

These devices are intended for use in snubber, boost,

piezo-injection, as high frequency rectifiers, and

freewheeling diodes.

V_R

V_Fat I_F

t_{rr (typ.)}

T_Jmax.

25 ns

The extremely optimized stored charge and low recovery

current minimize the switching losses and reduce power

dissipation in the switching element.

175 °C

Package

FlatPAK 5 x 6

Separated cathode

Circuit configuration

MECHANICAL DATA

Case: FlatPAK 5 x 6

Molding compound meets UL 94 V-0 flammability rating

Halogen-free, RoHS-compliant

Terminals: matte tin plated leads, solderable per

J-STD-002, meets JESD 201 class 2 whisker test

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Peak repetitive reverse voltage

V_RRM

200

T_Solderpad= 170 °C, DC

Average rectified forward current

Non-repetitive peak surge current

per device

I_F(AV)

T_Solderpad= 169 °C, D = 0.5

per device

per diode

173

I_FSM

T_J= 25 °C, 10 ms sinusoidal pulse

Operating junction and storage temperatures

T_J, T_Stg

-55 to +175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage, blocking voltage

_BR, V_R

I_R= 100 μA

200

I_F= 4 A

0.87

0.7

0.96

0.78

Forward voltage, per diode

V_F

I_F= 4 A, T_J= 150 °C

V_R= V_Rrated

Reverse leakage current, per diode

Junction capacitance

I_R

μA

T_J= 150 °C, V_R= V_Rrated

V_R= 200 V

C_T

Revision: 29-Jan-2021

Document Number: 96088

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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与VS-8DKH02HM3相关器件

型号	品牌	获取价格	描述	数据表
VS-8DKH02-M3	VISHAY	获取价格	Hyperfast Rectifier, 2 x 4 A FRED Pt?
VS-8E2TH06-E	VISHAY	获取价格	Hyperfast Rectifier, 8 A FRED Pt
VS-8E2TH06FP-E	VISHAY	获取价格	Hyperfast Rectifier, 8 A FRED Pt
VS-8E2TH06FP-M	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-220, HALOGEN FREE AND RO
VS-8E2TH06-M	VISHAY	获取价格	Hyperfast Rectifier, 8 A FRED Pt
VS-8E2TL06-E	VISHAY	获取价格	Ultralow VF Ultrafast Rectifier, 8 A FRED PtÂ
VS-8E2TL06FP-E	VISHAY	获取价格	Ultralow VF Ultrafast Rectifier, 8 A FRED PtÂ
VS-8E2TL06FP-M	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-220AC, HALOGEN FREE AND
VS-8E2TL06-M	VISHAY	获取价格	Ultralow VF Ultrafast Rectifier, 8 A FRED PtÂ
VS-8E2TX06-E	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-220AC, ROHS COMPLIANT, P

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