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VS-12CWQ04FNHM3 PDF预览

VS-12CWQ04FNHM3

更新时间: 2024-09-19 01:19:19
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 115K
描述
Center tap configuration

VS-12CWQ04FNHM3 数据手册

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VS-12CWQ04FNHM3  
www.vishay.com  
Vishay Semiconductors  
Schottky Rectifier, 2 x 6 A  
FEATURES  
• Low forward voltage drop  
Base  
common  
cathode  
4
• Guard ring for enhanced ruggedness and  
long term reliability  
• Popular D-PAK outline  
• Center tap configuration  
2
• Small foot print, surface mountable  
• High frequency operation  
• AEC-Q101 qualified  
Common  
cathode  
D-PAK (TO-252AA)  
1
3
Anode  
Anode  
• Meets JESD 201 class 2 whisker test  
PRODUCT SUMMARY  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
Package  
D-PAK (TO-252AA)  
2 x 6 A  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
IF(AV)  
VR  
40 V  
VF at IF  
IRM  
0.48 V  
DESCRIPTION  
40 mA at 125 °C  
150 °C  
The VS-12CWQ04FNHM3 surface mount, center tap,  
Schottky rectifier series has been designed for applications  
requiring low forward drop and small foot prints on PC  
board. Typical applications are in disk drives, switching  
power supplies, converters, freewheeling diodes, battery  
charging, and reverse battery protection.  
TJ max.  
Diode variation  
EAS  
Common cathode  
9 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
12  
UNITS  
Rectangular waveform  
A
V
40  
tp = 5 μs sine  
550  
A
VF  
6 Apk, TJ = 125 °C (per leg)  
Range  
0.48  
V
TJ  
- 55 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-12CWQ04FNHM3  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
VR  
40  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average  
forward current  
See fig. 5  
per leg  
6
IF(AV)  
50 % duty cycle at TC = 134 °C, rectangular waveform  
A
per device  
12  
Maximum peak one cycle  
non-repetitive surge current  
See fig. 7  
Following any rated  
load condition and with  
rated VRRM applied  
5 μs sine or 3 μs rect. pulse  
550  
IFSM  
A
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 1.5 A, L = 8 mH  
90  
9
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
1.2  
Revision: 21-Aug-13  
Document Number: 94736  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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