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VS-12CWQ10FNHM3 PDF预览

VS-12CWQ10FNHM3

更新时间: 2024-11-07 20:58:19
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
6页 117K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 100V V(RRM), Silicon, TO-252AA, DPAK-3/2

VS-12CWQ10FNHM3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:DPAK-3/2
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:26 weeks风险等级:5.7
其他特性:FREE WHEELING DIODE应用:GENERAL PURPOSE
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.95 VJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:110 A
元件数量:2相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260参考标准:AEC-Q101
最大重复峰值反向电压:100 V最大反向电流:1000 µA
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:10
Base Number Matches:1

VS-12CWQ10FNHM3 数据手册

 浏览型号VS-12CWQ10FNHM3的Datasheet PDF文件第2页浏览型号VS-12CWQ10FNHM3的Datasheet PDF文件第3页浏览型号VS-12CWQ10FNHM3的Datasheet PDF文件第4页浏览型号VS-12CWQ10FNHM3的Datasheet PDF文件第5页浏览型号VS-12CWQ10FNHM3的Datasheet PDF文件第6页 
VS-12CWQ10FNHM3  
www.vishay.com  
Vishay Semiconductors  
Schottky Rectifier, 2 x 6 A  
FEATURES  
• Low forward voltage drop  
Base  
common  
cathode  
4
• Guard ring for enhanced ruggedness and  
long term reliability  
• Popular D-PAK outline  
• Center tap configuration  
2
• Small foot print, surface mountable  
• High frequency operation  
• AEC-Q101 qualified  
Common  
cathode  
D-PAK (TO-252AA)  
1
3
Anode  
Anode  
• Meets JESD 201 class 2 whisker test  
PRODUCT SUMMARY  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
Package  
D-PAK (TO-252AA)  
2 x 6 A  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
IF(AV)  
VR  
100 V  
VF at IF  
IRM  
0.65 V  
DESCRIPTION  
4 mA at 125 °C  
150 °C  
The VS-12CWQ10FNHM3 surface mount, center tap,  
Schottky rectifier series has been designed for applications  
requiring low forward drop and small foot prints on PC  
board. Typical applications are in disk drives, switching  
power supplies, converters, freewheeling diodes, battery  
charging, and reverse battery protection.  
TJ max.  
Diode variation  
EAS  
Common cathode  
6 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
12  
UNITS  
Rectangular waveform  
A
V
100  
tp = 5 μs sine  
330  
A
VF  
6 Apk, TJ = 125 °C (per leg)  
Range  
0.65  
V
TJ  
- 55 to 150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-12CWQ10FNHM3  
UNITS  
Maximum DC reverse voltage  
VR  
100  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average  
forward current  
See fig. 5  
per leg  
6
IF(AV)  
50 % duty cycle at TC = 135 °C, rectangular waveform  
A
per device  
12  
Maximum peak one cycle  
non-repetitive surge current per leg  
See fig. 7  
Following any rated  
load condition and with  
rated VRRM applied  
5 μs sine or 3 μs rect. pulse  
330  
IFSM  
A
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 1 A, L = 12 mH  
110  
6
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
1
Revision: 21-Aug-13  
Document Number: 94734  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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