Datasheet > VS-10TQ035SHM3

VS-10TQ035SHM3

更新时间： 2024-11-27 01:14:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	168K
描述
High Performance Schottky Rectifier, 10 A

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VS-10TQ035SHM3 数据手册

VS-10TQ035SHM3, VS-10TQ045SHM3

www.vishay.com

Vishay Semiconductors

High Performance Schottky Rectifier, 10 A

FEATURES

• 175 °C T_Joperation

• Low forward voltage drop

• High frequency operation

Base

cathode

• High purity, high temperature epoxy

encapsulation for enhanced mechanical

strength and moisture resistance

• Guard ring for enhanced ruggedness and long

term reliability

D²PAK

N/C

Anode

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

PRODUCT SUMMARY

• AEC-Q101 qualified meets JESD 201 class 1A whisker

test

I_F(AV)

10 A

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

V_R

35 V, 45 V

0.49 V

V_Fat I_F

I_RMmax.

T_Jmax.

E_AS

15 mA at 125 °C

175 °C

DESCRIPTION

The VS-10TQ...SHM3 Schottky rectifier series has been

optimized for low reverse leakage at high temperature. The

proprietary barrier technology allows for reliable operation

up to 175 °C junction temperature. Typical applications are

in switching power supplies, converters, freewheeling

diodes, and reverse battery protection.

13 mJ

Package

Diode variation

TO-263AB (D²PAK)

Single die

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

I_F(AV)

V_RRM

I_FSM

V_F

Rectangular waveform

35/45

1050

t_p= 5 μs sine

10 A_pk, T_J= 125 °C

Range

0.49

T_J

-55 to 175

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

V_R

VS-10TQ035SHM3

VS-10TQ045SHM3

UNITS

Maximum DC reverse voltage

Maximum working peak reverse voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

50 % duty cycle at T_C= 151 °C, rectangular waveform

VALUES

UNITS

Maximum average forward current

See fig. 5

I_F(AV)

5 μs sine or 3 μs rect. pulse

1050

Maximum peak one cycle

non-repetitive surge current

See fig. 7

Following any rated

load condition and with

rated V_RRMapplied

I_FSM

10 ms sine or 6 ms rect. pulse

T_J= 25 °C, I_AS= 2 A, L = 6.5 mH

280

Non-repetitive avalanche energy

Repetitive avalanche current

E_AS

I_AR

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

Revision: 06-Mar-14

Document Number: 94962

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与VS-10TQ035SHM3相关器件

型号	品牌	获取价格	描述	数据表
VS-10TQ035S-M3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 35V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VS-10TQ035SPBF	VISHAY	获取价格	Schottky Rectifier, 10 A
VS-10TQ035SPBF_15	VISHAY	获取价格	Schottky Rectifier
VS-10TQ035STRLHM3	VISHAY	获取价格	High Performance Schottky Rectifier, 10 A
VS-10TQ035STRL-M3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 35V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VS-10TQ035STRLPBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 35V V(RRM), Silicon, HALOGEN FREE AND
VS-10TQ035STRRHM3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 35V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VS-10TQ035STRR-M3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 35V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VS-10TQ040-N3	VISHAY	获取价格	DIODE RECTIFIER DIODE, Rectifier Diode
VS-10TQ040PBF	VISHAY	获取价格	DIODE RECTIFIER DIODE, Rectifier Diode

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