Datasheet > VS-10TQ035-M3

VS-10TQ035-M3

更新时间： 2024-09-23 14:55:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	152K
描述
High Performance Schottky Rectifier, 10 A

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

VS-10TQ035-M3 数据手册

VS-10TQ035-M3, VS-10TQ040-M3, VS-10TQ045-M3

www.vishay.com

Vishay Semiconductors

High Performance Schottky Rectifier, 10 A

FEATURES

Base

cathode

• 175 °C T_Joperation

• Low forward voltage drop

• High frequency operation

• High purity, high temperature epoxy

encapsulation for enhanced mechanical

strength and moisture resistance

Cathode

Anode

TO-220AC 2L

• Guard ring for enhanced ruggedness and long term

reliability

• Designed and qualified according to JEDEC^®-JESD 47

PRIMARY CHARACTERISTICS

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

I_F(AV)

10 A

V_R

V_Fat I_F

35 V, 40 V, 45 V

0.49 V

DESCRIPTION

I_RM

15 mA at 125 °C

175 °C

The VS-10TQ... Schottky rectifier series has been optimized

for low reverse leakage at high temperature. The proprietary

barrier technology allows for reliable operation up to 175 °C

junction temperature. Typical applications are in switching

power supplies, converters, freewheeling diodes, and

reverse battery protection.

T_Jmax.

E_AS

13 mJ

Package

Circuit configuration

TO-220AC 2L

Single

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

I_F(AV)

V_RRM

I_FSM

V_F

Rectangular waveform

35 to 45

1050

t_p= 5 μs sine

10 A_pk, T_J= 125 °C

Range

0.49

T_J

-55 to +175

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

V_R

VS-10TQ035-M3

VS-10TQ040-M3

VS-10TQ045-M3

UNITS

Maximum DC reverse voltage

Maximum working peak reverse voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

50 % duty cycle at T_C= 151 °C, rectangular waveform

VALUES

UNITS

Maximum average forward current

See fig. 5

I_F(AV)

Maximum peak one cycle non-repetitive

surge current

See fig. 7

5 μs sine or 3 μs rect. pulse

10 ms sine or 6 ms rect. pulse

T_J= 25 °C, I_AS= 2 A, L = 6.5 mH

Following any rated load

condition and with rated

V_RRMapplied

1050

280

I_FSM

Non-repetitive avalanche energy

E_AS

I_AR

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

Repetitive avalanche current

Revision: 28-Feb-2023

Document Number: 96260

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

中文翻译

下载PDF

与VS-10TQ035-M3相关器件

型号	品牌	获取价格	描述	数据表
VS-10TQ035-N3	VISHAY	获取价格	Schottky Rectifier, 10 A
VS-10TQ035PBF	VISHAY	获取价格	DIODE RECTIFIER DIODE, Rectifier Diode
VS-10TQ035PBF_15	VISHAY	获取价格	Schottky Rectifier
VS-10TQ035SHM3	VISHAY	获取价格	High Performance Schottky Rectifier, 10 A
VS-10TQ035S-M3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 35V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VS-10TQ035SPBF	VISHAY	获取价格	Schottky Rectifier, 10 A
VS-10TQ035SPBF_15	VISHAY	获取价格	Schottky Rectifier
VS-10TQ035STRLHM3	VISHAY	获取价格	High Performance Schottky Rectifier, 10 A
VS-10TQ035STRL-M3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 35V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VS-10TQ035STRLPBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 35V V(RRM), Silicon, HALOGEN FREE AND

与VS-10TQ035-M3相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

73
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

65
SL74HC10N：高性能三输入与非门解析
2024-09-03

149
AIC1781A 电池充电控制器深度解析
2024-09-03

131

产品中心

服务支持

精选活动

关于我们

帮助中心

VS-10TQ035-M3

VS-10TQ035-M3 数据手册

与VS-10TQ035-M3相关器件

与VS-10TQ035-M3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

VS-10TQ035-M3

VS-10TQ035-M3 数据手册

与VS-10TQ035-M3相关器件

与VS-10TQ035-M3相关文章

您还可以找

您在本页遇到什么问题？