Datasheet > VN2410L-GP014

VN2410L-GP014

更新时间： 2024-11-08 15:57:35

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
3页	544K
描述
SMALL SIGNAL, FET

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中文翻译

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数据手册

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VN2410L-GP014 数据手册

Supertex inc.

VN2410

N-Channel Enhancement-Mode

Vertical DMOS FET

Features

General Description

► Free from secondary breakdown

► Low power drive requirement

► Ease of paralleling

This enhancement-mode (normally-off) transistor utilizes

a vertical DMOS structure and Supertex’s well-proven,

silicon-gate manufacturing process. This combination

produces a device with the power handling capabilities

of bipolar transistors and the high input impedance and

positive temperature coefﬁcient inherent in MOS devices.

Characteristic of all MOS structures, this device is free

from thermal runaway and thermally-induced secondary

breakdown.

► Low C_ISSand fast switching speeds

► Excellent thermal stability

► Integral source-drain diode

► High input impedance and high gain

Applications

► Motor controls

► Converters

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

► Ampliﬁers

► Switches

► Power supply circuits

► Drivers (relays, hammers, solenoids, lamps, memories,

displays, bipolar transistors, etc.)

Ordering Information

Product Summary

R_DS(ON)

(max)

10Ω

Part Number

Package Option

Packing

I_DSS

(min)

BV_DSS/BV_DGS

VN2410L-G

TO-92

1000/Bag

240V

1.0A

VN2410L-G P002

VN2410L-G P003

VN2410L-G P005

VN2410L-G P013

VN2410L-G P014

Pin Conﬁguration

TO-92

2000/Reel

-G denotes a lead (Pb)-free / RoHS compliant package.

Contact factory for Wafer / Die availablity.

Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.

DRAIN

SOURCE

Absolute Maximum Ratings

Parameter

Value

GATE

TO-92

Drain-to-source voltage

Drain-to-gate voltage

BV_DSS

BV_DGS

±20V

Gate-to-source voltage

Product Marking

Operating and storage temperature

-55^OC to +150^OC

Si VN

2 4 1 0 L

YYWW

YY = Year Sealed

Absolute Maximum Ratings are those values beyond which damage to the device may

occur. Functional operation under these conditions is not implied. Continuous operation

of the device at the absolute rating level may affect device reliability. All voltages are

referenced to device ground.

WW = Week Sealed

= “Green” Packaging

Package may or may not include the following marks: Si or

Typical Thermal Resistance

TO-92

Package

θ_ja

TO-92

132^OC/W

Doc.# DSFP-VN2410

C081913

Supertex inc.

www.supertex.com

12 3

中文翻译

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与VN2410L-GP014相关器件

型号	品牌	获取价格	描述	数据表
VN2410L-G-P014	MICROCHIP	获取价格	N-Channel Enhancement-Mode Vertical DMOS FET
VN2410LS	VISHAY	获取价格	N-Channel 240-V (D-S) MOSFETs
VN2410LS-TA	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.19A I(D), 240V, 1-Element, N-Channel, Silicon, Met
VN2410LSTR	VISHAY	获取价格	暂无描述
VN2410LS-TR1	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.19A I(D), 240V, 1-Element, N-Channel, Silicon, Met
VN2410LTR	TEMIC	获取价格	Small Signal Field-Effect Transistor, 0.18A I(D), 240V, 1-Element, N-Channel, Silicon, Met
VN2410LZL1	ROCHESTER	获取价格	200mA, 240V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, CASE 29-11, 3 PIN
VN2410LZL1G	ROCHESTER	获取价格	暂无描述
VN2410LZL1G	ONSEMI	获取价格	Small Signal MOSFET 240V 200mA 10 Ohm Single N-Channel TO-92 Logic Level
VN2410M	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 240V V(BR)DSS \| 200MA I(D) \| TO-237

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