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2N7002K-T1-E3 PDF预览

2N7002K-T1-E3

更新时间: 2024-02-22 04:50:24
品牌 Logo 应用领域
威世 - VISHAY 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
9页 219K
描述
N-Channel 60-V (D-S) MOSFET

2N7002K-T1-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5其他特性:LOW THRESHOLD, ESD PROTECTION, FAST SWITCHING
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):0.3 A最大漏源导通电阻:4 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
功耗环境最大值:0.35 W最大功率耗散 (Abs):0.35 W
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2N7002K-T1-E3 数据手册

 浏览型号2N7002K-T1-E3的Datasheet PDF文件第2页浏览型号2N7002K-T1-E3的Datasheet PDF文件第3页浏览型号2N7002K-T1-E3的Datasheet PDF文件第4页浏览型号2N7002K-T1-E3的Datasheet PDF文件第5页浏览型号2N7002K-T1-E3的Datasheet PDF文件第6页浏览型号2N7002K-T1-E3的Datasheet PDF文件第7页 
2N7002K  
Vishay Siliconix  
N-Channel 60-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
ID (mA)  
Definition  
2 at VGS = 10 V  
60  
300  
Low On-Resistance: 2 Ω  
Low Threshold: 2 V (typ.)  
Low Input Capacitance: 25 pF  
Fast Switching Speed: 25 ns  
Low Input and Output Leakage  
TrenchFET® Power MOSFET  
2000 V ESD Protection  
Compliant to RoHS Directive 2002/95/EC  
TO-236  
SOT-23  
BENEFITS  
Low Offset Voltage  
G
S
1
Low-Voltage Operation  
Easily Driven Without Buffer  
High-Speed Circuits  
Low Error Voltage  
3
D
2
APPLICATIONS  
Top View  
Direct Logic-Level Interface: TTL/CMOS  
Drivers: Relays, Solenoids, Lamps, Hammers, Display,  
Memories, Transistors, etc.  
2N7002K (7K)*  
* Marking Code  
Battery Operated Systems  
Solid-State Relays  
Ordering Information: 2N7002K-T1  
2N7002K-T1-E3 (Lead (Pb)-free)  
2N7002K-T1-GE3 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
60  
Unit  
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
V
20  
TA = 25 °C  
300  
Continuous Drain Current (TJ = 150 °C)b  
Pulsed Drain Currenta  
ID  
TA = 100 °C  
190  
mA  
W
IDM  
PD  
800  
TA = 25 °C  
0.35  
0.14  
350  
Power Dissipationb  
TA = 100 °C  
Maximum Junction-to-Ambientb  
°C/W  
°C  
RthJA  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
Notes:  
a. Pulse width limited by maximum junction temperature.  
b. Surface Mounted on FR4 board.  
* Pb containing terminations are not RoHS compliant, exemptions may apply.  
Document Number: 71333  
S09-0857-Rev. E, 18-May-09  
www.vishay.com  
1

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