Datasheet > VFT3080C

VFT3080C

更新时间： 2024-11-14 08:13:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	79K
描述
Dual Trench MOS Barrier Schottky Rectifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

VFT3080C 数据手册

New Product

VFT3080C

Vishay General Semiconductor

Dual Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.46 V at I_F= 5 A

FEATURES

TMBS^®

ITO-220AB

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder bath temperature 275 °C max. 10 s, per

JESD 22-B106

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

• Halogen-free according to IEC 61249-2-21 definition

VFT3080C

PIN 1

PIN 3

PIN 2

TYPICAL APPLICATIONS

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

MECHANICAL DATA

Case: ITO-220AB

Molding compound meets UL 94 V-0 flammability rating

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 15 A

80 V

Base P/N-M3

- halogen-free, RoHS compliant, and

V_RRM

commercial grade

I_FSM

150 A

0.65 V

150 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

V_Fat I_F= 15 A

T_Jmax.

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VFT3080C

UNIT

Maximum repetitive peak reverse voltage

V_RRM

per device

per diode

Maximum average forward rectified current

(fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

150

Voltage rate of change (rated V_R)

dV/dt

V_AC

10 000

1500

V/μs

Isolation voltage from termal to heatsink t = 1 min

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

°C

Document Number: 89262

Revision: 18-Nov-10

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

12 3 4

中文翻译

下载PDF

与VFT3080C相关器件

型号	品牌	获取价格	描述	数据表
VFT3080C_15	VISHAY	获取价格	Dual Trench MOS Barrier Schottky Rectifier
VFT3080C-E3/4W	VISHAY	获取价格	Dual Trench MOS Barrier Schottky Rectifier
VFT3080C-M3/4W	VISHAY	获取价格	DIODE 15 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLA
VFT3080C-M3-4W	VISHAY	获取价格	Dual Trench MOS Barrier Schottky Rectifier
VFT3080S	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier
VFT3080S-E3/4W	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier
VFT3080S-M3	VISHAY	获取价格	High efficiency operation
VFT3080S-M3_15	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier
VFT3080S-M3-4W	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier
VFT30L60C	VISHAY	获取价格	Dual Trench MOS Barrier Schottky Rectifier