VFT3080C
Vishay General Semiconductor
www.vishay.com
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.46 V at IF = 5 A
FEATURES
• Trench MOS Schottky technology
TMBS®
ITO-220AB
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s,
per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3
2
1
TYPICAL APPLICATIONS
VFT3080C
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PIN 1
PIN 3
PIN 2
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
80 V
VRRM
Base P/N-M3
- halogen-free, RoHS-compliant, and
commercial grade
IFSM
150 A
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
VF at IF = 15 A
TJ max.
Package
0.65 V
150 °C
ITO-220AB
Polarity: As marked
Diode variation
Dual common cathode
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VFT3080C
UNIT
Maximum repetitive peak reverse voltage
VRRM
80
30
15
V
per device
per diode
Maximum average forward rectified current
(fig. 1)
IF(AV)
A
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
150
Voltage rate of change (rated VR)
dV/dt
VAC
10 000
1500
V/μs
V
Isolation voltage from terminal to heatsink t = 1 min
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
°C
Revision: 20-Aug-15
Document Number: 89262
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000