VFT3080C-E3/4W

更新时间： 2024-11-14 08:13:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	148K
描述
Dual Trench MOS Barrier Schottky Rectifier

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替代型号

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VFT3080C-E3/4W 数据手册

New Product

VT3080C, VFT3080C, VBT3080C, VIT3080C

Vishay General Semiconductor

Dual Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.46 V at I_F= 5 A

FEATURES

• Trench MOS Schottky technology

TMBS^®

TO-220AB

ITO-220AB

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

• Solder bath temperature 275 °C maximum, 10 s, per

JESD 22-B106 (for TO-220AB, ITO-220AB, and

TO-262AA package)

VT3080C

VFT3080C

TO-262AA

• Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

PIN 1

PIN 3

PIN 1

PIN 3

PIN 2

CASE

TO-263AB

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, dc-to-dc

converters and reverse battery protection.

MECHANICAL DATA

VBT3080C

VIT3080C

Case:

TO-262AA

TO-220AB,

ITO-220AB,

TO-263AB

and

PIN 1

PIN 2

PIN 1

PIN 3

PIN 2

HEATSINK

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

PRIMARY CHARACTERISTICS

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

I_F(AV)

2 x 15 A

V_RRM

80 V

150 A

0.65 V

150 °C

E3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

I_FSM

Mounting Torque: 10 in-lbs maximum

V_Fat I_F= 15 A

T_Jmax.

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL VT3080C VFT3080C VBT3080C VIT3080C UNIT

Maximum repetitive peak reverse voltage

V_RRM

per device

per diode

Maximum average forward rectified current (fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load

I_FSM

E_AS

150

160

1.0

Non-repetitive avalanche energy at T_J= 25 °C, L = 60 mH

Peak repetitive reverse current at t_p= 2 µs, 1 kHz,

T_J= 38 °C 2 °C per diode

I_RRM

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min

V_AC

1500

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

°C

Document Number: 89168

Revision: 08-Sep-09

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5

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VFT3080C-E3/4W 替代型号

型号	品牌	替代类型	描述	数据表
VFT3080C-M3/4W	VISHAY	完全替代	DIODE 15 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLA

与VFT3080C-E3/4W相关器件

型号	品牌	获取价格	描述	数据表
VFT3080C-M3/4W	VISHAY	获取价格	DIODE 15 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLA
VFT3080C-M3-4W	VISHAY	获取价格	Dual Trench MOS Barrier Schottky Rectifier
VFT3080S	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier
VFT3080S-E3/4W	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier
VFT3080S-M3	VISHAY	获取价格	High efficiency operation
VFT3080S-M3_15	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier
VFT3080S-M3-4W	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier
VFT30L60C	VISHAY	获取价格	Dual Trench MOS Barrier Schottky Rectifier
VFT30L60C_15	VISHAY	获取价格	Dual Trench MOS Barrier Schottky Rectifier
VFT30L60C-E3-4W	VISHAY	获取价格	Dual Trench MOS Barrier Schottky Rectifier

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