Datasheet > VFT3080S-M3-4W

VFT3080S-M3-4W

更新时间： 2024-11-15 08:13:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	79K
描述
Trench MOS Barrier Schottky Rectifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

VFT3080S-M3-4W 数据手册

New Product

VFT3080S

Vishay General Semiconductor

Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.39 V at I_F= 5 A

FEATURES

TMBS^®

ITO-220AB

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder bath temperature 275 °C max. 10 s, per

JESD 22-B106

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

• Halogen-free according to IEC 61249-2-21 definition

VFT3080S

PIN 1

PIN 3

PIN 2

TYPICAL APPLICATIONS

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

MECHANICAL DATA

Case: ITO-220AB

Molding compound meets UL 94 V-0 flammability rating

PRIMARY CHARACTERISTICS

I_F(AV)

30 A

80 V

Base P/N-M3

- halogen-free, RoHS compliant, and

V_RRM

commercial grade

I_FSM

200 A

0.73 V

150 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

V_Fat I_F= 30 A

T_Jmax.

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VFT3080S

UNIT

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (fig. 1)

V_RRM

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

200

Voltage rate of change (rated V_R)

dV/dt

V_AC

10 000

1500

V/μs

Isolation voltage from termal to heatsink t = 1 min

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

°C

Document Number: 89263

Revision: 18-Nov-10

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

12 3 4

中文翻译

下载PDF

与VFT3080S-M3-4W相关器件

型号	品牌	获取价格	描述	数据表
VFT30L60C	VISHAY	获取价格	Dual Trench MOS Barrier Schottky Rectifier
VFT30L60C_15	VISHAY	获取价格	Dual Trench MOS Barrier Schottky Rectifier
VFT30L60C-E3-4W	VISHAY	获取价格	Dual Trench MOS Barrier Schottky Rectifier
VFT30L60C-M3/4W	VISHAY	获取价格	DIODE RECTIFIER DIODE, Rectifier Diode
VFT4045BP	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
VFT4045BP_15	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier
VFT4045BP-M3/4W	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
VFT4045C	VISHAY	获取价格	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VFT4045C-M3	VISHAY	获取价格	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VFT4045C-M3/4W	VISHAY	获取价格	DIODE 20 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLA