Datasheet > VFT4060C-E3

VFT4060C-E3

更新时间： 2024-11-16 01:24:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	88K
描述
Trench MOS Schottky technology

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数据手册

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VFT4060C-E3 数据手册

VFT4060C-E3

Vishay General Semiconductor

www.vishay.com

Dual Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.32 V at I_F= 5.0 A

FEATURES

TMBS^®

ITO-220AB

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

VFT4060C

PIN 1

PIN 3

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters, and reverse battery protection.

PIN 2

MECHANICAL DATA

PRIMARY CHARACTERISTICS

Case: ITO-220AB

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, and commercial grade

I_F(AV)

2 x 20 A

60 V

V_RRM

I_FSM

240 A

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

V_Fat I_F= 20 A

T_Jmax.

Package

0.48 V

150 °C

ITO-220AB

Polarity: As marked

Diode variation

Dual common cathode

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VFT4060C

UNIT

Maximum repetitive peak reverse voltage

V_RRM

per device

per diode

Maximum average forward rectified current

(fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

240

Voltage rate of change (rated V_R)

dV/dt

V_AC

10 000

1500

V/μs

Isolation voltage from termal to heatsink t = 1 min

Operating junction and storage temperature range

T_J, T_STG

-40 to +150

°C

Revision: 22-Nov-13

Document Number: 89379

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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