Datasheet > VFT4060C_15

VFT4060C_15

更新时间： 2024-11-16 01:25:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	80K
描述
Dual Trench MOS Barrier Schottky Rectifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

VFT4060C_15 数据手册

VFT4060C

Vishay General Semiconductor

www.vishay.com

Dual Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.32 V at I_F= 5.0 A

FEATURES

TMBS^®

ITO-220AB

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

VFT4060C

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters, and reverse battery protection.

PIN 1

PIN 3

PIN 2

MECHANICAL DATA

Case: ITO-220AB

Molding compound meets UL 94 V-0 flammability rating

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 20 A

60 V

V_RRM

Base P/N-M3

- halogen-free, RoHS-compliant, and

I_FSM

240 A

0.48 V

150 °C

commercial grade

V_Fat I_F= 20 A

T_Jmax.

Package

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

ITO-220AB

Dual common cathode

Polarity: As marked

Diode variation

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VFT4060C

UNIT

Maximum repetitive peak reverse voltage

V_RRM

per device

per diode

Maximum average forward rectified current

(fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

240

Voltage rate of change (rated V_R)

dV/dt

V_AC

10 000

1500

V/μs

Isolation voltage from terminal to heatsink t = 1 min

Operating junction and storage temperature range

T_J, T_STG

-40 to +150

°C

Revision: 20-Aug-15

Document Number: 89437

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4

中文翻译

下载PDF

与VFT4060C_15相关器件

型号	品牌	获取价格	描述	数据表
VFT4060C-E3	VISHAY	获取价格	Trench MOS Schottky technology
VFT4060C-E3_15	VISHAY	获取价格	Dual Trench MOS Barrier Schottky Rectifier
VFT4060C-E3-4W	VISHAY	获取价格	Dual Trench MOS Barrier Schottky Rectifier
VFT4060C-M3/4W	VISHAY	获取价格	DIODE RECTIFIER DIODE, Rectifier Diode
VFT45-28	ASI	获取价格	VHF POWER MOSFET N-Channel Enhancement Mode
VFT45-28_07	ASI	获取价格	VHF POWER MOSFET
VFT5200	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier
VFT5200-E3/4W	VISHAY	获取价格	DIODE 5 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC, ITO-220AC,
VFT5200-E3-4W	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier
VFT5202-M3/4W	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 200V V(RRM), Silicon, TO-220AC, ITO-220