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V20100R

更新时间： 2024-11-18 05:52:35

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
5页	151K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

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V20100R 数据手册

New Product

V20100R & VF20100R

Vishay General Semiconductor

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V = 0.54 V at I = 5 A

FEATURES

TMBS^®

• Trench MOS Schottky technology

TO-220AB

ITO-220AB

• Low forward voltage drop, low power

losses

• High efficiency operation

• Solder dip 260 °C, 40 s

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

V20100R

VF20100R

PIN 1

PIN 3

PIN 1

PIN 3

PIN 2

CASE

PIN 2

TYPICAL APPLICATIONS

For use in high frequency inverters, switching power

supplies, freewheeling diodes, OR-ing diode, dc-to-dc

converters and reverse battery protection.

MECHANICAL DATA

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 10 A

Case: TO-220AB and ITO-220AB

V_RRM

100 V

120 A

0.65 V

150 °C

Epoxy meets UL 94V-0 flammability rating

I_FSM

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test

V_Fat I_F= 10 A

T_Jmax.

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V20100R

VF20100R

UNIT

Maximum repetitive peak reverse voltage

V_RRM

100

Maximum average forward rectified current

(Fig. 1)

per device

per diode

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

120

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min

V_AC

1500

Operating junction and storage temperature range

T_J, T_STG

- 40 to + 150

°C

Document Number: 89062

Revision: 19-May-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5

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V20100R-E3/4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
V20100R-M3/4W	VISHAY	获取价格	DIODE RECTIFIER DIODE, Rectifier Diode
V20100S	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A
V20100S_11	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
V20100S_12	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
V20100S-E3	VISHAY	获取价格	High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A
V20100S-E3/4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A
V20100SG	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
V20100SG_08	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
V20100SG_09	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier